The development of ultrathin barrier films is vital to the advanced semiconductor industry. Graphene appears to hold promise as a protective coating; however, the polycrystalline and defective nature of engineered graphene hinders its practical applications. Here, we investigate the oxidation behavior of graphene-coated Cu foils at intrinsic graphene defects of different origins. Macro-scale information regarding the spatial distribution and oxidation resistance of various graphene defects is readily obtained using optical and electron microscopies after the hot-plate annealing. The controlled oxidation experiments reveal that the degree of structural deficiency is strongly dependent on the origins of the structural defects, the crystallographic orientations of the underlying Cu grains, the growth conditions of graphene, and the kinetics of the graphene growth. The obtained experimental and theoretical results show that oxygen radicals, decomposed from water molecules in ambient air, are effectively inverted at Stone–Wales defects into the graphene/Cu interface with the assistance of facilitators.

As the elements of integrated circuits are downsized to the nanoscale, the current Cu‐based interconnects are facing limitations due to increased resistivity and decreased current‐carrying capacity because of scaling. Here, the bottom‐up synthesis of single‐crystalline WTe2 nanobelts and low‐ and high‐field electrical characterization of nanoscale interconnect test structures in various ambient conditions are reported. Unlike exfoliated flakes obtained by the top‐down approach, the bottom‐up growth mode of WTe2 nanobelts allows systemic characterization of the electrical properties of WTe2 single crystals as a function of channel dimensions. Using a 1D heat transport model and a power law, it is determined that the breakdown of WTe2 devices under vacuum and with AlOx capping layer follows an ideal pattern for Joule heating, far from edge scattering. High‐field electrical measurements and self‐heating modeling demonstrate that the WTe2 nanobelts have a breakdown current density approaching ≈100 MA cm−2, remarkably higher than those of conventional metals and other transition‐metal chalcogenides, and sustain the highest electrical power per channel length (≈16.4 W cm−1) among the interconnect candidates. The results suggest superior robustness of WTe2 against high‐bias sweep and its possible applicability in future nanoelectronics.

The prevalence of chronic kidney disease (CKD) is increasing worldwide. Although hyperuricemia has been associated with CKD in many studies, it remains controversial whether this is the cause or the result of decreased renal function. Recent observational studies of healthy populations and patients with CKD have reported that uric acid (UA) has an independent role in the development or progression of CKD. Experimental studies have shown several potential mechanisms by which hyperuricemia may cause or promote CKD. However, other reports have indicated an association between hypouricemia and CKD. This opposing effect is hypothesized to occur because UA is a major antioxidant in human plasma and is associated with oxidative stress. In this article, we discuss the potential association between UA imbalance and CKD and how they can be treated.

Following the celebrated discovery of graphene, considerable attention has been directed toward the rich spectrum of properties offered by van der Waals crystals. However, studies have been largely limited to their 2D properties due to lack of 1D structures. Here, the growth of high-yield, single-crystalline 1D nanobelts composed of transition metal ditellurides at low temperatures (T ≤ 500 °C) and in short reaction times (t ≤ 10 min) via the use of tellurium-rich eutectic metal alloys is reported. The synthesized semimetallic 1D products are highly pure, stoichiometric, structurally uniform, and free of defects, resulting in high electrical performances. Furthermore, complete compositional tuning of the ternary ditelluride nanobelts is achieved with suppressed phase separation, applicable to the creation of unprecedented low-dimensional materials/devices. This approach may inspire new growth/fabrication strategies of 1D layered nanostructures, which may offer unique properties that are not available in other materials.

Nickel (Ni) nanoparticles (NPs) prepared through vapor-phase synthesis (VPS) are preferred for multilayer ceramic capacitor electrodes due to their high purity and crystallinity advantages. Agglomerated Ni NPs are usually generated using VPS but are undesirable because they cause various problems such as low packing density and electrical shorts. This study proposes the use of coating-assisted chemical vapor synthesis (CVS) for agglomerate inhibition using NaCl or KCl as a coating agent. We have found that the agglomeration ratio, 34.40%, for conventional CVS, can be reduced to 4.80% in the proposed method by in-flight coating with KCl at 900 °C by image analysis using field-emission scanning electron microscopy. Furthermore, the X-ray diffraction and X-ray fluorescence analyses confirm that the NaCl and KCl coating agent can be removed by washing with distilled water. We believe that this coating process can be used to inhibit the formation of agglomerates during the CVS of Ni NPs.