This work highlights the importance of reporting the surface properties of polycrystalline substrates when presenting nucleation studies and metal nanoparticle electrochemical growth.

InAs crystal grain size reduction by potential-enabled parasitic gas-evolution reactions in the electrochemically-mediated growth of InAs.

The optical properties of periodic metallic nanoparticle lattices have found many exciting applications. Indium is an emerging plasmonic material that offers to extend the plasmonic applications given by gold and silver from the visible to the ultraviolet spectral range, with applications in imaging, sensing, and lasing. Due to the high vapor pressure/low melting temperature of indium, nanofabrication of ordered metallic nanoparticles is nontrivial. In this work, we show the potential of selective area electrochemical deposition to generate large-area lattices of In pillars for plasmonic applications. We study the optical response of the In lattices by means of angle-dependent extinction measurements demonstrating strong plasmonic surface lattice resonances and a good agreement with numerical simulations. The results open avenues toward high-quality lattices of plasmonic indium nanoparticles and can be extended to other promising plasmonic materials that can be electrochemically grown.

<p>III-V semiconductor family has composition and size dependent optoelectronic properties ideal for a variety of applications in photonics and electronics. Due to the ever-increasing demand for nanophotonic and nanoelectronic devices, new crystal growth techniques have been proposed to tackle economical disadvantages of the more traditional methods. Electrochemical mediated III-V crystal growth has been demonstrated at room temperatures and pressures. One of the ad-vantages of this technique is the possibility of controlling the crystal growth with the applied potential. In this work we study the relationship between the applied potential and the resulting crystal structure of InAs. Raman analysis shows that the average crystal correlation length of the electrochemically grown InAs can be tuned by the deposition potential. In particular, we find that the average correlation length decreases with applied potential, following the phonon confinement model. The decrease in the average crystal correlation size is explained here by an increase in the nanostructured roughness of the grown InAs. Such roughness is likely induced by co-contaminant gas evolution (e.g., H₂ and AsH₃) and/or As overgrowth. Our results clearly show that the crystal structure of electrochemically grown III-V semiconductors can be controlled with the potential, opening up the possibility to fine-tune optoelectronic properties at atmospheric conditions.</p>

<p>III-V semiconductor family has composition and size dependent optoelectronic properties ideal for a variety of applications in photonics and electronics. Due to the ever-increasing demand for nanophotonic and nanoelectronic devices, new crystal growth techniques have been proposed to tackle economical disadvantages of the more traditional methods. Electrochemical mediated III-V crystal growth has been demonstrated at room temperatures and pressures. One of the ad-vantages of this technique is the possibility of controlling the crystal growth with the applied potential. In this work we study the relationship between the applied potential and the resulting crystal structure of InAs. Raman analysis shows that the average crystal correlation length of the electrochemically grown InAs can be tuned by the deposition potential. In particular, we find that the average correlation length decreases with applied potential, following the phonon confinement model. The decrease in the average crystal correlation size is explained here by an increase in the nanostructured roughness of the grown InAs. Such roughness is likely induced by co-contaminant gas evolution (e.g., H₂ and AsH₃) and/or As overgrowth. Our results clearly show that the crystal structure of electrochemically grown III-V semiconductors can be controlled with the potential, opening up the possibility to fine-tune optoelectronic properties at atmospheric conditions.</p>