New polyamide thin film composite membranes were prepared by interfacial polymerization of hexafluoroalcohol (HFA)-containing aromatic diamine and trimesoyl chloride (TMC) on a porous polysulfone support. The surface properties of the resulting membranes were characterized by water contact angle, XPS, and SEM. Additionally, the desalination separation performance was evaluated by the cross-flow filtration of 2000 ppm NaCl solution. Water contact angle and XPS analyses indicated that the HFA-containing polyamide membrane is relatively hydrophobic at neutral conditions but becomes hydrophilic at basic conditions due to ionization of the HFA groups, so we refer to this group as an ''ionizable hydrophobe'' or ''i-phobe''. The membrane showed strongly pH-dependent reverse osmosis behavior with enhanced performance (high water flux and high salt rejection) at high pH (ca. 10). Both the electron withdrawing nature and the steric bulkiness of the HFA functionality are also advantageous in protecting the polyamide membrane from chlorine attack. Based upon NMR studies of model polymers (linear polyamides with and without the HFA functionality) and the membrane performance measured before and after chlorine exposure, the HFA-containing polyamide has improved chlorine stability compared to the reference polyamide made from m-phenylenediamine and TMC.
Thermo-optic coefficients for TE-and TM-polarized lights (dn TE /dT and dn TM /dT; temperature gradient of refractive index) were measured for seven kinds of aromatic polyimide (PI) films formed on Si Substrates. The values of dn/dT for average refractive indices (dn av /dT) are in a range of −52 to −87 ppm/K, and the absolute values of dn TE /dT are significantly larger than those for dn TM /dT for all PI films. As predicted from the temperature derivative of the Lorenz-Lorenz equation, the amorphous PI films with high n av exhibit large |dn av /dT|. On the other hand, significant polarization dependences of dn/dT, which are observed as the temperature gradients of birefringence (d(∆n)/dT), was observed even for the PI films having very small ∆n, although a large ∆n should cause a large d(∆n)/dT according to the temperature derivative of the Vuks equation. The significant d(∆n)/dT observed for the PI films with small ∆n is originated from the large residual stress (~50 MPa) induced on the films derived from the mismatch in thermal expansion between the PI and Si substrate. Since residual stress on the films decreases as temperature increases, the stress birefringence should exhibit temperature dependence, which causes significant polarization dependence in dn/dT.
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