Electrical characteristics of the InP surface J. Vac. Sci. Technol. 13, 868 (1976); 10.1116/1.569005 [This article is copyrighted as indicated in the article. Reuse of AIP content is subject to the terms at: http://scitation.aip.org/termsconditions. Downloaded to ] IP: 129.22.67.7 On: Mon, 01 Dec 2014 17:12:566906

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Articles you may be interested inEffects of sulfur passivation and rapid thermal annealing on the electrical properties of InP metal-insulator semiconductor Schottky diodes Abstract: Electrical characteristics of the InP surface Au-n + -type InP Schottky diodes have been fabricated using anodic oxidation and etching with aqueous HCl. The electrical characteristics are measured and discussed based upon the effects of surface states between the gate metal and semiconductor. Typical values of the barrier height, ideality factor and surface state density are evaluated as 0.55 eY, 1.34 and 4.2 X 10 12 cm -2 ey-I , respectively. The mean electron affinity at the semiconductor surface is found to be about 0.5-eYsmaller than the bulk electron affinity. Further, the stability of the diode characteristics has been examined.