The electrical characteristics of InP Schottky diodes

Hattori, Kazuo; Izumi, Yoshihiko

doi:10.1063/1.329507

Cited by 12 publications

(4 citation statements)

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“…47 This value results much lower than that reported for bulk InP of 4.4 eV. As reported for InP-Au Schottky contacts, 48 the value of the electron affinity may vary spatially at the semiconductor surface due to some structural disorder such as nonstoichiometric and random distribution of In and P atoms. The affinity of the conditioned surface increases by χ = 0.44 eV due to the formation of In-Cl dipoles.…”

Section: Resultsmentioning

confidence: 65%

Photoelectrochemical Conditioning of MOVPE p-InP Films for Light-Induced Hydrogen Evolution: Chemical, Electronic and Optical Properties

Muñoz¹,

Heine²,

Lublow³

et al. 2013

ECS J. Solid State Sci. Technol.

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Homoepitaxial p-InP(100) thin films prepared by MOVPE (metallorganic vapor phase epitaxy) were transformed into an InP/oxidephosphate/Rh heterostructure by photoelectrochemical conditioning. Surface sensitive synchrotron radiation photoelectron spectroscopy indicates the formation of a mixed oxide constituted by In(PO 3 ) 3 , InPO 4 and In 2 O 3 as nominal components during photo-electrochemical activation. The operation of these films as hydrogen evolving photocathode proved a light-to-chemical energy conversion efficiency of 14.5%. Surface activation arises from a shift of the semiconductor electron affinity by 0.44 eV by formation of In-Cl interfacial dipoles with a density of about 10 12 cm −2 . Predominant local In 2 O 3 -like structures in the oxide introduce resonance states near the semiconductor conduction band edge imparting electron conductivity to the phosphate matrix. Surface reflectance investigations indicate an enhanced light-coupling in the layered architecture. Solar hydrogen generation from water represents a viable route for establishing a carbon-neutral energy infrastructure based on renewable energy resources.1-4 To achieve this long-term objective, numerous approaches are currently being pursued comprising adapting systems derived from photosynthesis, 5-7 identification of appropriate catalysts, 8 development of transition metal oxide photoelectrodes 9,10,11 as well as devising efficient semiconductor tandem structures.12-14 Because biomimetic systems inspired by natural photosynthesis are characterized by rather low theoretical efficiencies, 6 the use of photoresponsive semiconductor materials for the splitting of water appears currently most promising. It can be shown that dual-bandgap systems reach theoretically efficiencies well above 40% at AM1.5. 15 The development horizon suggests therefore the use of technologically advanced semiconductor materials which would allow comparably fast technical realization. Further, the orthogonalization of charge carrier and photon pathways as well as an increased built-in potential by interfacial doping was recently exploited to achieve efficiencies near 10% using Si as substrate. 16 p-type InP is one of the most efficient photocathode materials for hydrogen evolution available. Heller and Vadimsky 17 have shown three decades ago that hydrogen evolution can occur with an efficiency of 12% if rhodium is deposited as catalytically active and optically transparent thin-film on top of an In 2 O 3 /InP structure. In this work, a new approach based on thin film photoelectrodes is presented. The photocathode is realized by homoepitaxial growth of thin films onto InP wafers which allows the use of liftoff procedures already known for photovoltaic systems. 18,19 The removal of the thin film photocathodes from the growth substrate is thereby possible after fabrication of the devices. This approach reduces production costs, which is a decisive factor for many III-V devices. In this report, we evaluate the applicability of homoepitaxial devices with emphasis in...

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Section: Resultsmentioning

confidence: 65%

Photoelectrochemical Conditioning of MOVPE p-InP Films for Light-Induced Hydrogen Evolution: Chemical, Electronic and Optical Properties

Muñoz¹,

Heine²,

Lublow³

et al. 2013

ECS J. Solid State Sci. Technol.

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“…For the substrates that were only solvent cleaned, the contact formed between the n-InP and both the CdO and CdO:Sn exhibit Schottky behavior as shown in panel (a) of Figure . The pretreatment/cleaning of a semiconductor prior to contact material deposition can have a strong effect on the contact’s electronic properties. , To preclude the possibilities of trace organics being left at the interface prior to CdO deposition, the InP was O 2 plasma cleaned. The resulting contacts still exhibited Schottky behavior and were more resistive than those formed by solvent cleaning as shown in panel (b) of Figure .…”

Section: Resultsmentioning

confidence: 99%

Ohmic Contact of Cadmium Oxide, a Transparent Conducting Oxide, to n-type Indium Phosphide

Buchholz

et al. 2011

ACS Appl. Mater. Interfaces

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Good ohmic contact to n-type indium phosphide (n-InP) with cadmium oxide (CdO), a transparent conducting oxide (TCO), has been achieved. Hydrogen plasma surface pretreatment of the n-InP substrate, prior to the pulsed laser deposition (PLD) of the CdO film, is key to achieving ohmic contact. On substrates pretreated with a hydrogen plasma, contact resistances as low as (6.8 ± 2.8) × 10(-6) Ω cm(2) are obtained.

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“…Table 1 shows Schottky barrier Φ B and threshold voltage V th of SBDs using tungsten (W) as a metal, SBDs with 10% GaN replaced by In, and Ni/n-InP-based SBDs. [32][33][34][35][36][37][38][39][40][41] There are some problems such as formation of low-damage W/n-GaN Schottky barrier using high-melting tungsten and growth of GaN crystals with thickness of several hun- dred nanometers or more, but the table shows that using W/n-GaN and Ni/n-GaN Schottky junctions contributes to reduction of threshold voltage and power consumption of terahertz patch antennas using GaN-based SBDs.…”

Section: Detection With Gan-based Sbdmentioning

confidence: 99%

“…As regards reduction of Schottky barrier and threshold voltage, one can think of using metals with work function Φ m smaller than that of Ni employed as anode, or using semiconductors with electron affinity χ higher than that of GaN, thus enabling low‐power operation. Table 1 shows Schottky barrier Φ B and threshold voltage V th of SBDs using tungsten (W) as a metal, SBDs with 10% GaN replaced by In, and Ni/n‐InP‐based SBDs 32–41 . There are some problems such as formation of low‐damage W/n‐GaN Schottky barrier using high‐melting tungsten and growth of GaN crystals with thickness of several hundred nanometers or more, but the table shows that using W/n‐GaN and Ni/n‐GaN Schottky junctions contributes to reduction of threshold voltage and power consumption of terahertz patch antennas using GaN‐based SBDs.…”

Section: Structure Of Gan‐based Terahertz‐band Antennamentioning

confidence: 99%

Analysis of terahertz double dielectric structure patch antenna using nitride semiconductors

Miura

Kurahashi

Goshima

et al. 2023

Elect Comm in Japan

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Recently, gallium arsenide (GaAs)‐based resonant tunneling diode (RTD) oscillators and indium phosphorus (InP)‐based Schottky barrier diode (SBD) receivers have been studied in the terahertz (THz) band. The THz devices for practical use should operate at room temperature, be small in size, and have high output power. Therefore, this study was focused on gallium nitride (GaN), which possesses excellent material properties, such as wide bandgap characteristics and heteroepitaxy on Si substrates. The GaN‐based oscillators and receivers are expected to be compact, operate at room‐temperature, and act as a high‐power device for the THz‐band devices. However, GaN has crystal defects, which can cause instability in device operations. A double dielectric structure patch antenna composed of Silicon Nitride (SiN) and Benzo Cyclo Butene (BCB) with different dielectric constants was proposed to realize a GaN‐based THz transmitter and receiver. The antenna characteristics were investigated using the Finite Difference Time Domain (FDTD) method. The results showed that the SiN has little effect on the radiation, whereas the BCB is strongly responsible for the radiation. Comparing the absolute gain between the double dielectric structure and the conventional structure using the SiN, it was confirmed that the double dielectric structure can improve the absolute gain.

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The electrical characteristics of InP Schottky diodes

Cited by 12 publications

References 11 publications

Photoelectrochemical Conditioning of MOVPE p-InP Films for Light-Induced Hydrogen Evolution: Chemical, Electronic and Optical Properties

Photoelectrochemical Conditioning of MOVPE p-InP Films for Light-Induced Hydrogen Evolution: Chemical, Electronic and Optical Properties

Ohmic Contact of Cadmium Oxide, a Transparent Conducting Oxide, to n-type Indium Phosphide

Analysis of terahertz double dielectric structure patch antenna using nitride semiconductors

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