Crack-free AlGaN/GaN high-electron-mobility transistors (HEMTs) grown on a 200 mm Si substrate by metal–organic chemical vapor deposition (MOCVD) is presented. As grown epitaxial layers show good surface uniformity throughout the wafer. The AlGaN/GaN HEMT with the gate length of 1.5 µm exhibits a high drain current density of 856 mA/mm and a transconductance of 153 mS/mm. The 3.8-µm-thick device demonstrates a high breakdown voltage of 1.1 kV and a low specific on-resistance of 2.3 mΩ cm2 for the gate–drain spacing of 20 µm. The figure of merit of our device is calculated as 5.3×108 V2 Ω-1 cm-2.

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We report recessed-gate Al2O3/AlGaN/GaN normally-OFF metal–oxide–semiconductor high-electron-mobility transistors (MOS-HEMTs) on 8 in. Si. The MOS-HEMTs showed a maximum drain current of 300 mA/mm with a high threshold voltage of +2.4 V. The quite low subthreshold leakage current (∼10−8 mA/mm) yielded an excellent ON/OFF current ratio (9 × 108) with a small, stable subthreshold slope of 74 mV/dec. An atomic-layer-deposited Al2O3 layer effectively passivates, as no significant drain current dispersions were observed. A high OFF-state breakdown voltage of 825 V was achieved for a device with a gate-to-drain distance of 20 µm at a gate bias of 0 V.

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