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A 0.18 pn 4 Mbit FRAM for high performance System on Chip (Soc) was developed Large polarization and higb reliability were achieved with a (111) oriented MOCVD PZT We also developed new OpaCitor fabrication technology, receswd Ir bamier and high t e m p e m one mask etching. We achieved embedded FRAM with only two additional masks for conventional CMOS process.

An x-ray tube is described whose attributes of beam coherency, low penetrating power and high intensity were required for the radiography of cigarettes, but it is thought to have a potential usefulness also in the field of radiobiology and Jnedium energy crystallography. At full load the tube has a rating of 300 w at 15 kv. The diameter of the source, as determined by resolution experiments, is 0.61 mm, so that the specific target loading is 1 3 03 kw m-'.

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