GaN nanorod formation on Ga‐polar GaN by continuous mode metalorganic chemical vapor deposition selective area growth (MOCVD SAG) is achieved under a relatively Ga‐rich condition. The Ga‐rich condition, provided by applying a very low V/III ratio, alters the growth rates of various planes of the defined nanostructure by increasing relative growth rate of the semi‐polar tilted m‐plane {1–101} that usually is the slowest growing plane under continuous growth conditions. This increased growth rate relative to the non‐polar m‐plane {1–100} and even the c‐plane (0001), permits the formation of GaN nanorods with nonpolar sidewalls. In addition, a new growth mode, called the NH3‐pulsed mode, is introduced, utilizing the advantages of both the continuous mode and the lower growth rate pulsed mode to form nanorods. Finally, nanorods grown under the different growth modes are compared and discussed.

A color-temperature tunable white light-emitting diode (LED) based on a newly developed monolithic color-tunable LED structure was demonstrated. The color-tunable LED structure consists of three different sets of quantum wells separated by intermediate carrier blocking layers that can independently emit visible lights from 460 to 650 nm under different injection currents. To generate white light, the color-tunable LED is operated under pulsed conditions with each pulse consisting of multiple steps of different current amplitudes and widths emitting different colors. The combined spectrum of different colors is aimed to mimic that of the blackbody radiation light source. The pulse rate is designed to be higher than the human eye response rate, so the human eye will not discern the emission of successive colors but a singular emission of white light. Results of a two-step pulse design show this method is able to generate white light from 2700 K – 6500 K. Moreover, their color coordinates fall within the 4-step MacAdam ellipses about the Planckian locus while achieving the Color Rendering Index (CRI) in the 80-90 range. Finally, simulations show improvement of CRI into the 90-100 range is possible with further optimization to the color-tunable LED spectral emission and use of three-step pulses.

Efficient green emitting LEDs and monolithic white light emitting LEDs require the extension of the range of efficient light emission in the GaN/InGaN materials system. We demonstrate high efficiency green and yellow light emitting multiple quantum well (MQW) structures grown on GaN nanostripe templates. The structures show promise for realizing high efficiency phosphor -free white LEDs. The nanostripe dimensions range from 100 to 300 nm and have separations that range from 300 nm to 1 mm. The MOCVD growth conditions strongly affect surfaces expressed in the GaN nanostripes whose sidewalls can be controlled to be nearly vertical or inclined and intersecting. Single quantum well (QW) structures are grown on these different stripes. Photoluminescence (PL) measurement shows that QW grown on stripes with the {10À11} surfaces and triangular shape emit the longest peak wavelength and highly efficient PL emission peak wavelengths as long as 570 nm are realized. PL and electroluminescence (EL) spectra show narrow linewidth that is comparable to the planar case and CL studies further demonstrate the uniform emission wavelength along the sidewalls of the structures. Finally, we have grown and fabricated green emitting LEDs on {10À11} faceted nanostripes with promising device characteristics.

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Yellow and green emitting multiple quantum well structures are grown on nanostripe templates with {10-11} facets. SEM and cathodoluminescence measurements show a correlation between rough surface morphology near the bottom of the stripes and non-radiative recombination centers. Transmission electron microscopy (TEM) analysis shows that these surface instabilities are a result of stacking faults generated from the quantum well (QW) regions near the bottom of the pyramid that propagate to the surface. HRTEM images show that the stacking faults are I1 type which is formed by removal of one half basal plane to relieve the compressive strain in the InGaN QW. Thicker QWs near the bottom as a result of growth rate enhancement due to the surface diffusion of the precursors from the mask regions cause increased strain. Additionally, the compressive strain induced by the bending of the nanostructure towards the growth mask further increases the strain experienced by the QW thereby causing the localized defect generation.