No abstract

Novel a-Si p-i-n solar cells with “delta-doped (δ-doped)” p-layers were shown to enhance the hole concentration of the p-layers. A high photoconductivity of 1 ×10-4 Scm-1 (AM1, 100 mWcm-2) was obtained using a δ-doped p-layer. The existence of δ-deped boron layers was confirmed by cross-sectional TEM (transmission electron microscope) observations. A conversion efficiency of 11.5% was obtained for glass/TCO/p-i-n/Al solar cells with δ-doped p-layers. The photovoltaic characteristics of δ-doped p-layer solar cells exhibited a high open-circuit voltage of over 0.9 V, which is higher than that of solar cells with a conventional a-SiC p-layer. We furthermore investigated the stability of solar cells with δ-doped p-layers.

We have optimized the preparation conditions of p-i-n type a-Si:H solar cells prepared by photo-CVD. The pyramid-shaped SnO2 with haze ratio of 25% was chosen as the best TCO (transparent conductive oxide). The best efficiency obtained for a glass/TCO/p/buffer/i/n/Al structure of this type was 11.4% (V oc=0.90 V, I sc=17.86 mA/cm2, FF=0.706) for a 3×3 mm2 cell; the thicknesses of the p-, buffer-, i-, and n-layers were 50 A, 150 A, 7800 A, and 600 A, respectively.

No abstract

No abstract