The ferroelectric PbTiO 3 PT thin films were deposited on MgO100 and Si001 substrates by Liquid Source Mist Chemical Vapor Deposition LSMCVD method. The PbDPM 2 and TiiOC 3 H 7 4 TTIP were used as metal sources. Metal-organic sources were dissolved in 2-metoxyethanol. The PT thin films have h00 and 00l preferred orientations at lower metal source concentrations on MgO100 substrate. The epitaxial PT thin film could be prepared on MgO100 substrate at 0.02 molL solution at 600c C. The epitaxial PT thin films having stoichiometric composition and smooth surfaces were prepared on MgO100 substrates. In this study, the solution concentration is an important process parameter to fabricate epitaxial PT thin films. The PT thin films which have polycrystalline phases on Pt111TiO 2 SiO 2 Si001 showed about 320 of dielectric constants and 3uCcm 2 of remanent polarization with 109.54 kVcm of coercive field.