Low-temperature (100–200 °C) growth of phosphorus nitride (P3N5) on InP surfaces has been successfully developed using a mixture of PCl3 and NH3 gases by a direct photochemical vapor deposition. The films have a resistivity of 1×1014 Ω cm and a breakdown voltage of 1×107 V/cm. The minimum density of interface trap states for the aluminum (Al)-P3N5-InP metal-insulator-semiconductor structure after the in situ processes is about 3.6×1010 cm−2 eV−1 near the midgap of InP. Auger electron spectroscopy and x-ray photoelectron spectroscopy measurements were used to evaluate the film and the film/InP interface.

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Acrylic resins are widely used as the main components in removable orthodontic appliances. However, poor oral hygiene and maintenance of orthodontic appliances provide a suitable environment for the growth of pathogenic microorganisms. In this study, strontium-modified phosphate-based glass (Sr-PBG) was added to orthodontic acrylic resin at 0% (control), 3.75%, 7.5%, and 15% by weight to evaluate the surface and physicochemical properties of the novel material and its antifungal effect against Candida albicans. Surface microhardness and contact angle did not vary between the control and 3.75% Sr-PBG groups (p > 0.05), and the flexural strength was lower in the experimental groups than in the control group (p < 0.05), but no difference was found with Sr-PBG content (p > 0.05). All experimental groups showed an antifungal effect at 24 and 48 h compared to that in the control group (p < 0.05). This study demonstrated that 3.75% Sr-PBG exhibits antifungal effects against C. albicans along with suitable physicochemical properties, which may help to minimize the risk of adverse effects associated with harmful microbial living on removable orthodontic appliances and promote the use of various materials.