A method to design low-pass filters (LPF) having a defected ground structure (DGS) and broadened transmission-line elements is proposed. The previously presented technique for obtaining a three-stage LPF using DGS by Lim et al. is generalized to propose a method that can be applied in design-pole LPFs for 5. As an example, a five-pole LPF having a DGS is designed and measured. Accurate curve-fitting results and the successive design process to determine the required size of the DGS corresponding to the LPF prototype elements are described. The proposed LPF having a DGS, called a DGS-LPF, includes transmission-line elements with very low impedance instead of open stubs in realizing the required shunt capacitance. Therefore, open stubs, tee-or cross-junction elements, and high-impedance line sections are not required for the proposed LPF, while they all have been essential in conventional LPFs. Due to the widely broadened transmission-line elements, the size of the DGS-LPF is compact. Index Terms-Defected ground structure (DGS), low-pass filters (LPFs), periodic structures.

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The work-function variation (WFV) in high-κ/ metal-gate (HK/MG) Ge-source tunnel FETs (TFETs) is evaluated using technology computer-aided design simulations. By matching the simulation results with the plot for the ratio of the average grain size to the gate area (i.e., the RGG plot), we find that the slope in the RGG plot for the TFET can be significantly altered depending on three main factors, namely, the gate width, average grain size, and equivalent oxide thickness. In addition, it is verified that the variation of channel potential affects the WFV-induced threshold voltage variation in HK/MG Ge-source TFETs.

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