A novel floating-gate oxide semiconductor (FLOTOS) memory using a wide-band-gap indium–gallium–zinc oxide (IGZO) is presented for low-power system-on-panel applications. An IGZO thin-film-transistor (TFT) is used as a memory transistor for controlling read current as well as a switching transistor for storing charges in a storage capacitor (C s). The FLOTOS memory is fabricated using a standard IGZO TFT process without any additional process or mask steps. The proposed precharge-assisted threshold voltage compensation technique makes it possible to realize an infinite number of write cycles and a low-power write operation with a bit-line voltage of 5 V. Furthermore, excellent data retention longer than 10 h is obtained at 60 °C even under the worst bias-stress condition of read operation with the ultra low off-state leakage (2.8×10-20 A/µm) of the IGZO TFTs, which is estimated to be smaller by more than 7 orders of magnitude than that of polycrystalline silicon TFTs.

The lifetime for the read operation, which is described in the second line from the bottom of the right column on page 094101-5, should be corrected as follows:Wrong: 277 h Correct: 13.8 h This correction does not affect on this paper, because the maximum usage time with a single charge is 10 h for battery-powered wireless mobile terminal applications such as smartphones, as described in Sect. 7. The authors apologize to the readers and the editors for our mistake.

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