Two-terminal mono-and multilayer graphene nanoribbon resistive random access memories (ReRAMs) are experimentally demonstrated. Fundamental ReRAM properties, device scalability, and width dependence with device scaling are investigated. The lower switching energy is obtained for smaller channel width, indicating the suitability of graphene nanoribbons for high-density LSIs. Operation mechanism is studied by changing the type of contact metal and the number of graphene layers as well as by performing physical analysis by atomic force microscopy (AFM), cross-sectional transmission electron microscopy (TEM), and electron energy-loss spectroscopy (EELS). Then, it is suggested that the mechanism is the chemical bonding-state change of graphene. #

No abstract