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The performance potential of an 80 nm physical gate length MOSFET with GaAs channel and high-k gate insulator is investigated using Monte Carlo simulations. The results show that such a device could deliver a 100-125% increase in the drive current at both low and high drain biases compared to equivalent Si based MOSFETs. Various transport model enhancements including the Fermi-Dirac statistics and the interface roughness scattering have been systematically studied in order to attain a more realistic prediction of the device performance.

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