High-efficiency pulse-periodic laser utilizing high-concentration neodymium phosphate glass

Abstract

The performance potential of an 80 nm physical gate length MOSFET with GaAs channel and high-k gate insulator is investigated using Monte Carlo simulations. The results show that such a device could deliver a 100-125% increase in the drive current at both low and high drain biases compared to equivalent Si based MOSFETs. Various transport model enhancements including the Fermi-Dirac statistics and the interface roughness scattering have been systematically studied in order to attain a more realistic prediction of the device performance.

Principles of solid-state lasers

“…Expression [7.17] gets over into [7.16] in the limit t p >> t. This is approximate because of the assumptions that were taken, but it seems to be useful especially for free-running lasers with a multimode transverse distribution. For a four-level system [7.17] is given in Avanesov et al (1980).…”