A new analog pixel memory cell realized in a 3-μm LTPS technology is proposed to achieve low-power consumption for TFT-LCDs. By employing the inversion data in storage capacitor with complementary source follower, the frame rate to refresh the static image can be reduced from 60Hz to 3Hz with output decay only less than 0.075V under the input data from 1V to 4V.

A delta‐Sigma analog‐to‐digital (A/D) converter designed and implemented with the thin‐film transistors (TFTs) on glass substrate is proposed, which has been successfully verified in a 3‐μm low‐temperature polycrystalline silicon (LTPS) process. The experimental results have shown that the probability in the bit stream of the digital output from the delta‐Sigma modulator is correctly fit in the analog input voltage ratio. Such a bit stream can be converted into 8‐bit digital code successfully under the operation voltage of 10V with thin‐film transistors (TFTs) on the glass substrate. The proposed delta‐Sigma A/D converter can be further used to achieve the precise analog circuits for System‐on‐Panel (SOP) or System‐on‐Glass (SOG) applications, which enables the analog circuits to be integrated in the active matrix LCD (AMLCD) panels.

An on-panel readout circuit for touch panel application has been designed and fabricated in a 3-μm low temperature poly-silicon (LTPS) technology. The minimum detectable voltage difference of the proposed circuit is 30 mV. The switch-capacitor technique is applied to amplify the voltage difference from capacitance change due to touch panel. The corrected double-sampling (CDS) technique is also employed to reduce the offset originated from process variation.