A scalable and accessible photoactive formulation with a low synthetic complexity (SC) index is utilized in organic photovoltaic (OPV) fabrication. The formulation readily dissolves in nonchlorinated solvents, and the corresponding photoactive films can be processed by various coating methods to fabricate devices with power conversion efficiencies (PCEs) of 16.1% and 15.2% when using vacuum‐based molybdenum oxide and solution‐processable conducting polymer as the hole transporting layer in the inverted structure, respectively. This prepared device shows superior stability under light exposure. The PCE is maintained 94% of the initial values after 1080 h of light soaking at 100 mW cm−2. Furthermore, the figure of merit based on the ratio of the SC index and PCE indicates the benefit of this formulation for OPV manufacturing, showing the feasibility of commercialization. Eventually, a PCE of 10.3% is demonstrated for a mini‐module fabricated under ambient conditions, with an active area of 32.6 cm2. To our knowledge, this PCE is one of the largest values reported to date for a green solvent and an all‐solution‐processed OPV module with an inverted architecture.

OPD and readout integrated circuit (ROIC) enables several advantages. [6] For example, the sensor area can potentially reach a larger fill factor as the OPD is directly overlaid on top of an ROIC, which means that more incident photons will be absorbed by the photoactive layer (PAL), leading to imagers that are more sensitive to light. [5] In addition, the response spectra for organic semiconductors can be designed and tuned by adjusting the chemical structure, and the application of organic-based image sensors can be easily extended by changing the PAL materials with various light responses. [7,8] Among image sensors, near infrared (NIR) and shortwave infrared (SWIR) imaging technologies are essential to many applications, including health monitoring, [9,10] machine vision, [11] optical communication, [12] and spectro scopy. [13] Currently, the semiconductors utilized for the detection of NIR radiation are still determined by silicon (Si) technology, [14] such that the sensor structure requires high-temperature growth and complex bonding processes, and at a cost that remains prohibitive for large-area manufacturing. The external quantum efficiencies (EQEs) of Si-based detectors are also intrinsically limited when the incident light extends to the SWIR region, in which the wavelength (λ) is longer than 1000 nm.Considering various breakthroughs during the development of OPDs, it is noted that improvements that result in high performance always rely on both material innovation and stateof-the-art device engineering. An OPD with high EQEs of 66% and 67% at a wavelength of 940 and 1000 nm has been realized recently by using a specifically designed nonfullerene acceptor (NFA). [15] This result indicates the significant future potential of organic image sensor technology. For device engineering, photo multiplication type OPD has been developed successfully for highly sensitive sensors under weak light condition. Photomultiplication effect is commonly obtained by introducing charge traps in photoactive layer of OPD to realize interfacial trap-assisted charge injection, leading to the EQE larger than 100%, and the additional amplification systems are no longer needed due to its high EQE. [16,17] Also, OPD with narrowband spectral response has also been demonstrated by introducing the photomultiplication and charge injection narrowing Near infrared (NIR) and shortwave infrared (SWIR) image technologies are of interest for many emerging applications. Among photodetector technologies, organic photodetectors (OPDs) are groundbreaking light sensors with unique photon-to-electron responses at various wavelengths that offer limitless flexibility in field applications due to the tunable design of organic semiconductors. Herein, a top-illuminated OPD deposited on bottom aluminum electrode with a spectral response beyond a wavelength of 1000 nm is reported, which suggests a feasibility for image sensors integrated with bottom readout circuit. The results reveal that a device composed of aluminum-doped zinc oxide, nickel oxide, and...

Image-sensor technology is the foundation of many emerging applications, where the photodetector is designed to interact with incoming photons that have specific colors or wavelengths. A color filter is therefore crucial to enable the selective spectral response of the photodetector and to eliminate the crosstalk interference resulting from ambient lights. Unfortunately, a reduced detection sensitivity of the photodetector is inevitable due to an imperfect light filtering, which greatly limits the practical applications of selective-response photodetectors. Herein, we demonstrate a bulk-heterojunction (BHJ) organic composite featuring a self-filtering light responsive characteristic. Through a careful optimization of the BHJ film, the organic photodetector (OPD) demonstrates a high-selective spectral response to the infrared (IR) radiation without the need of applying a color filter. As a result, the self-filtering top-illuminated OPD exhibits a narrowband external quantum efficiency (EQE) of 53% with a narrow full width at half-maximum (fwhm) of 56 nm centering at 1080 nm. A high responsivity of 0.46 A W −1 is also achieved at 1080 nm wavelength due to the self-filtering characteristic.

A polymer-based hole-transporting layer (HTL) with a tunable work function and highest occupied molecular orbital (HOMO) position was demonstrated to effectively optimize the anode junctions of the optoelectronic devices. Herein,...

Achieving large-area organic photovoltaic (OPV) modules with reasonable cost and performance is an important step toward commercialization. In this work, solution-processed conventional and inverted OPV modules with an area of 216 cm2 were fabricated by the blade coating method. Film uniformity was controlled by adjusting the fabrication parameters of the blade coating procedure. The influence of the concentration of the solutions of the interfacial materials on OPV module performance was investigated. For OPV modules based on the PM6:Y6 photoactive layer, a certificated power conversion efficiency (PCE) of 9.10% was achieved for the conventional OPV modules based on the TASiW-12 interfacial layer while a certificated PCE of 11.27% was achieved for the inverted OPV modules based on the polyethylenimine (PEI) interfacial layer. As for OPV modules based on a commercially available photoactive layer, PV-X Plus, a PCE of 8.52% was achieved in the inverted OPV modules. A halogen-free solvent, o-xylene, was used as the solvent for PV-X Plus, which makes the industrial production much more environmentally friendly.