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Changes of dc conductivity for the porous silicon (PS) with different morphology and different pictures of the depleted areas after the irradiation with high-energy electrons (2 MeV, 2 Â 10 16 to 1 Â 10 17 cm ± ±2 ) are presented. PS layers of 5±60% porosity were formed by anodization of n-type Si (100), 4.5 W cm; n + -Si (111), 0.01 W cm; and p + -Si (111), 0.03 W cm substrates. It is shown that the dc conductivity change after the electron bombardment depends on the structural parameters of PS. Different physical models of the charge carrier transport in PS of various porosity were used for the explanation of the experimental results.Introduction Presently there is no knowledge of how high-energy electron bombardment influences the properties of porous silicon (PS). Modification of structural and photoluminescence properties of PS by low-energy (keV) electron bombardment is reported in [1±3]. PS bomberdment by high-energy (MeV) electrons may be important to study the physical characteristics of PS and to modify the properties of PS. The aim of this work is to study electrical conductivity changes in the porous material with different porosity (5±60%) and pore morphology after bombarding PS material with 2 MeV electrons up to doses in the range from 2 Â 10 16 to 1 Â 10 17 cm ± ±2 .

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