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A nondoped full‐exciplex approach is applied in white organic light‐emitting diodes (WOLEDs). Both the blue emission and yellow emission are from exciplex, which makes it possible to exceed the 25% internal quantum efficiency limit of normal fluorescent OLEDs via reverse intersystem crossing from triplet to singlet states because of the small energy gap between them. White emission can be realized by simply stacking the blue and yellow exciplex materials because the same acceptor material is used in the emitting systems. And a two‐color WOLED with an external quantum efficiency (EQE) of 6.11% is demonstrated, exceeding the efficiencies of the exciplex‐based blue and yellow monochrome devices. The higher efficiency is attributed to redistribution of the exciplex excitons, which suppresses the exciton concentration quenching at the emission interface. By adopting a quantum‐well‐like structure, the EQE can be further improved. This approach sheds light on the simple fabrication of high‐efficiency WOLEDs in the future.

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Silver nanowire (AgNW) is recognized as a critical material for developing the next generation of transparent conductive films (TCFs); however, poor stability remains a major issue. Herein, we demonstrate a stable AgNW TCF passivated by a metal–organic framework (MOF) via a facile solution process. The MOF is chemically bonded to the surface of the AgNWs as a chemical inhibitor, which contributes to passivating highly active sites and providing chemical protection, leading to enhanced resistance to corrosive molecules and thereby offering exceptional stability under an ambient atmosphere. Simultaneously, the binding interaction with the MOF anchors silver atoms at the surface of the nanowires, suppressing their diffusion at high temperatures and allowing the AgNW film to maintain excellent conductivity up to 300 °C. Additionally, the hydrogen bonding between the MOF and the substrate, along with the tight connection of the MOF with AgNWs, improves the welding between the nanowires, enhancing the conductivity of the AgNW film at mild conditions while offering good flexibility and adhesion properties. Furthermore, the OLED device integrating the MOF-modified AgNW electrode shows comparable performance to an indium tin oxide-based device, verifying its huge potential for applications in optoelectronic devices.