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A zero-bias microwave detector using an AlGaN/GaN-on-Si lateral diode featuring a recessed metal/Al 2 O 3 /III-nitride (MIS) gated hybrid anode (MG-HAD) is experimentally demonstrated. The forward turnon voltage of the MG-HAD is determined by the threshold-voltage of the 2DEG channel beneath the recessed MIS-gate, and thus the nonlinearity of the device at zero bias can be flexibly modulated by gate recessing. The optimal trench depth of the MIS-gate for zero-bias detection was designed and experimentally determined to be ∼23 nm, which enables a high-curvature coefficient of 78 V −1 at zero bias. The first-order voltage sensitivity, β V , is as high as 7.8 mV/μW. To the best of the authors' knowledge, these values are the highest reported for GaN-based zero-bias detectors to date.

The GaN HEMT is widely used in high-frequency aspects, use the T-gate to reduce gate resistance is one of the most effective methods to improve the the device maximum oscillation frequency (fmax). But fmax is very sensitive to T-gate size, improper selection may reduce fmax, Therefore, in order to reduce the cost of production, it is necessary to select appropriate simulation T-gate size. We have worked out AlGaN/GaN HEMT with gate length of 0.17μm and fmax values 110GHz. Accuracy of the simulation model is verified by experiment. Then detailed simulates the impact of the T-gate size and we obtain ptimized T-gate size range.