Memristor is an exciting new addition to the repertoire of fundamental circuit elements. Alternatives to many security protocols originally employing traditional mathematical cryptography involve novel hardware security primitives, such as Physically Unclonable Functions (PUFs). In this article, we propose a novel hybrid memristor-CMOS PUF circuit and demonstrate its suitability through extensive simulations of environmental and process variation effects. The proposed PUF circuit has substantially less hardware overhead than previously proposed memristor-based PUF circuits while being inherently resistant to machine learningbased modeling attacks because of challenge-dependent delays of the memristor stages. The proposed PUF can be conveniently used in many security applications and protocols based on hardware-intrinsic security.

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Memristor based logic and memories are increasingly be- coming one of the fundamental building blocks for future system design. Hence, it is important to explore various methodologies for implementing these blocks. In this paper, we present a novel Complementary Resistive Switching (CRS) based stateful logic operations using material implica- tion. The proposed solution benefits from exponential reduction in sneak path current in crossbar implemented logic. We validated the effectiveness of our solution through SPICE simulations on a number of logic circuits. It has been shown that only 4 steps are required for implementing N input NAND gate whereas memristor based stateful logic needs N+1 steps

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Recent trends in emerging nonvolatile memory systems necessitate efficient read/write (R/W) schemes. Efficient solutions with zero sneak path current, nondestructive R/W operations, minimum area and low power are some of the key requirements. Toward this end, we propose a novel crossbar memory scheme using a configuration row of cells for assisting R/W operations. The proposed write scheme minimizes the overall power consumption compared to the previously proposed write schemes and reduces the state drift problem. We also propose two read schemes, namely, assisted-restoring and self-resetting read. In assisted-restoring scheme, we use the configuration cells which are used in the write scheme, whereas we implement additional circuitry for self-reset which addresses the problem of destructive read. Moreover, by formulating an analytical model of R/W operation, we compare the various schemes. The overhead for the proposed assisted-restoring write/read scheme is an extra redundant row for the given crossbar array. For a typical array size of 200 × 200 the area overhead is about 0.5%, however, there is a 4X improvement in power consumption compared to the recently proposed write schemes. Quantitative analysis of the proposed scheme is analyzed by using simulation and analytical models