A detailed theoretical picture is given for the physics of strain effects in bulk semiconductors and surface Si, Ge, and III–V channel metal-oxide-semiconductor field-effect transistors. For the technologically important in-plane biaxial and longitudinal uniaxial stress, changes in energy band splitting and warping, effective mass, and scattering are investigated by symmetry, tight-binding, and k⋅p methods. The results show both types of stress split the Si conduction band while only longitudinal uniaxial stress along ⟨110⟩ splits the Ge conduction band. The longitudinal uniaxial stress warps the conduction band in all semiconductors. The physics of the strain altered valence bands for Si, Ge, and III–V semiconductors are shown to be similar although the strain enhancement of hole mobility is largest for longitudinal uniaxial compression in ⟨110⟩ channel devices and channel materials with substantial differences between heavy and light hole masses such as Ge and GaAs. Furthermore, for all these materials, uniaxial is shown to offer advantages over biaxial stress: additive strain and confinement splitting, larger two dimensional in-plane density of states, smaller conductivity mass, and less band gap narrowing.

Physical factors in the local cellular microenvironment, including cell shape and geometry, matrix mechanics, external mechanical forces, and nanotopographical features of the extracellular matrix, can all have strong influences in regulating stem cell fate. Stem cells sense and respond to these insoluble biophysical signals through integrin-mediated adhesions and the force balance between intracellular cytoskeletal contractility and the resistant forces originated from the extracellular matrix. Importantly, these mechanotransduction processes can couple with many other potent growth factor-mediated signaling pathways to regulate stem cell fate. Different bioengineering tools and micro/nanoscale devices have been successfully developed to engineer the physical aspects of the cellular microenvironment for stem cells, and these tools and devices have proven extremely powerful to identify the extrinsic physical factors and their downstream intracellular signaling pathways that control stem cell functions.

Human embryonic stem cells (hESCs) have great potentials for future cell-based therapeutics. However, their mechanosensitivity to biophysical signals from the cellular microenvironment is not well characterized. Here we introduced an effective microfabrication strategy for accurate control and patterning of nanoroughness on glass surfaces. Our results demonstrated that nanotopography could provide a potent regulatory signal over different hESC behaviors, including cell morphology, adhesion, proliferation, clonal expansion, and self-renewal. Our results indicated that topological sensing of hESCs might include feedback regulation involving mechanosensory integrin-mediated cell-matrix adhesion, myosin II, and E-cadherin. Our results also demonstrated that cellular responses to nanotopography were cell-type specific and as such, we could generate a spatially segregated co-culture system for hESCs and NIH/3T3 fibroblasts using patterned nanorough glass surfaces.

Our understanding of the intrinsic mechanosensitive properties of human pluripotent stem cells (hPSCs), in particular the effects that the physical microenvironment has on their differentiation, remains elusive1. Here, we show that neural induction and caudalization of hPSCs can be accelerated by using a synthetic microengineered substrate system consisting of poly(dimethylsiloxane) micropost arrays (PMAs) with tunable mechanical rigidities. The purity and yield of functional motor neurons (MNs) derived from hPSCs within 23 days of culture using soft PMAs were improved more than 4- and 10-fold, respectively, compared to coverslips or rigid PMAs. Mechanistic studies revealed a multi-targeted mechanotransductive process involving Smad phosphorylation and nucleocytoplasmic shuttling, regulated by rigidity-dependent Hippo-YAP activities and actomyosin cytoskeleton integrity and contractility. Our findings suggest that substrate rigidity is an important biophysical cue influencing neural induction and subtype specification, and that microengineered substrates can thus serve as a promising platform for large-scale culture of hPSCs.

Metal-oxide-semiconductor field-effect transistors (MOSFETs) have shown impressive performance improvements over the past 10 years by incorporating strained silicon (Si) technology. This review gives an overview of the impact of strain on carrier mobility in Si n- and pMOSFETs by considering strain-induced band splitting, band warping and consequent carrier repopulation, and altered conductivity effective mass and scattering rate. Different surface orientations, channel directions, and gate electric fields are included for a fully theoretical understanding. The results are used to predict strain-enhanced silicon-on-insulator (SOI) and multigate device performance, mainly focusing on potential 22-nm and beyond device options such as double-gate and trigate fin field-effect transistor (FinFET) structures. Insights into strain-enhanced potential future channel materials (SiGe, Ge, and GaAs) are also summarized. Finally, recent technology nodes with strain engineering are reviewed, and the future developing trend is given.