The trivalent lanthanides have been broadly utilized as emitting centers in persistent luminescence (PersL) materials due to their wide emitting spectral range, which thus attract considerable attention over decades. However, the origin of the trivalent lanthanides’ PersL is still an open question, hindering the development of excellent PersL phosphors and their broad applications. Here, the PersL of 12 kinds of the trivalent lanthanides with the exception of La3+, Lu3+, and Pm3+ is reported, and a mechanism of the PersL of the trivalent lanthanides in wide bandgap hosts is proposed. According to the mechanism, the excitons in wide bandgap materials transfer their recombination energy to the trivalent lanthanides that bind the excitons, followed by the generation of PersL. During the PersL process, the trivalent lanthanides as isoelectronic traps bind excitons, and the binding ability is not only related to the inherent arrangement of the 4f electrons of the trivalent lanthanides, but also to the extrinsic ligand field including anion coordination and cation substitution. Our work is believed to be a guidance for designing high-performance PersL phosphors.

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Fast, sensitive, and precise detection of nitric oxide (NO) is critical to many applications in environmental monitoring and early disease diagnosis via respiratory testing. An effective detection system requires a sensor to detect NO gas at the parts per billion (ppb) level, and this system should possess a high degree of anti-interference selectivity. To achieve these targets, a series of gas sensor thin films based on intrinsic WO3, one-additive-doped WO3 (prepared by doping In2O3 or Nb2O5), and two-additive-doped WO3 (synthesized by doping with In2O3 and Nb2O5) oxides were successfully grown. By analyzing the properties of sensitivity, selectivity, responsiveness, and recovery time of the gas sensors, we found that WO3-1wt%In2O3-1wt%Nb2O5 has overwhelming advantages over intrinsic WO3, WO3-In2O3, and WO3-Nb2O5. A sensing response value of 2.4 was observed for NO concentrations as low as 20 ppb from the WO3-1wt%In2O3-1wt%Nb2O5 sensor. With 100 ppb NO gas, the WO3-1wt%In2O3-1wt%Nb2O5 sensor achieved a high response of 56.1 at 70 °C, which is a state-of-the-art performance for NO detection at low working temperature settings. WO3-1wt%In2O3-1wt%Nb2O5 also yields significantly improved selectivity and stability over intrinsic WO3, WO3-In2O3, and WO3-Nb2O5. Studies on the sensing mechanism show that the grain size, rather than the n–n heterostructure effect, plays a dominant role in the observed results. By decreasing the grain size so that it is close to the thickness of the space-charge layer, the sensing response is enhanced. Although room remains to further improve the sensing properties, the performance of WO3-1wt%In2O3-1wt%Nb2O5 is sufficient for implementation in low-content NO detection devices.

The authors develop a device model for a resonant detector of modulated terahertz radiation based on a micromachined high-electron-mobility transistor with the microcantilever serving as the gate. The device model accounts for mechanical motion of the microcantilever and plasma effects of the two-dimensional electron channel. It is demonstrated that at a combined resonance when the carrier terahertz frequency and the modulation frequency coincide with the plasma resonant frequency and the mechanical resonant frequency, respectively, the amplitude of the output gate and drain ac currents and, hence, the detector resonsivity exhibit sharp and high maximum.

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