2018
DOI: 10.1021/acsami.8b14243
|View full text |Cite
|
Sign up to set email alerts
|

Nitric Oxide Detector Based on WO3-1wt%In2O3-1wt%Nb2O5 with State-of-the-Art Selectivity and ppb-Level Sensitivity

Abstract: Fast, sensitive, and precise detection of nitric oxide (NO) is critical to many applications in environmental monitoring and early disease diagnosis via respiratory testing. An effective detection system requires a sensor to detect NO gas at the parts per billion (ppb) level, and this system should possess a high degree of anti-interference selectivity. To achieve these targets, a series of gas sensor thin films based on intrinsic WO3, one-additive-doped WO3 (prepared by doping In2O3 or Nb2O5), and two-additiv… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
3
1
1

Citation Types

1
15
0

Year Published

2019
2019
2025
2025

Publication Types

Select...
8

Relationship

1
7

Authors

Journals

citations
Cited by 31 publications
(17 citation statements)
references
References 61 publications
1
15
0
Order By: Relevance
“…The device exhibited a 197% sensitivity to 200 ppb with a response time of 223 s and easily recovered its initial resistance once we had stopped injecting NO. In contrast to most other NO sensors, our LM-based electrode performed rather well at low concentrations and could detect NO levels as low as 15 ppb with a sensitivity of 8.7% [45][46][47][48][49][50][51][52][53][54]. The sensitivity of our sensor exhibits a strong linear correlation with the gas concentration (Figure 3(c), R 2 = 0:95).…”
Section: Resultsmentioning
confidence: 77%
“…The device exhibited a 197% sensitivity to 200 ppb with a response time of 223 s and easily recovered its initial resistance once we had stopped injecting NO. In contrast to most other NO sensors, our LM-based electrode performed rather well at low concentrations and could detect NO levels as low as 15 ppb with a sensitivity of 8.7% [45][46][47][48][49][50][51][52][53][54]. The sensitivity of our sensor exhibits a strong linear correlation with the gas concentration (Figure 3(c), R 2 = 0:95).…”
Section: Resultsmentioning
confidence: 77%
“…Equations 1−8 show some details regarding those physical and chemical processes. 52 According to the previous studies, those active oxygen species that are adsorbed on the surface of a semiconductor oxide are dependent on T w . When T w is below 150 °C, the dominant adsorbed oxygen species is O 2(ads) − (eq 1).…”
Section: Resultsmentioning
confidence: 97%
“…It is very similar to the doped WO 3 materials previously studied in detail. 52 The energy of gas molecules at 90 °C is sufficient to overcome the activation energy barriers of the adsorption process and redox reactions, 54,62 then, a higher temperature may result in a heavy desorption process and reduce the total number of adsorbed molecules. In addition, from the redox reactions described using eqs 6 and 7, at a high T w , the electrons start to move back to the material from NO molecules, which also decreases the sensitivity.…”
Section: Resultsmentioning
confidence: 99%
See 1 more Smart Citation
“…As an ideal gas sensing material, In 2 O 3 has good development prospects for low temperature gas sensing detection of oxidizing gases, like NO 2 [15,16]. To improve the NO 2 gas sensing performance of In 2 O 3 -based materials, a lot of dopants and catalysts have been exploited and their role in NO 2 sensing behavior has been investigated [17,18]. Among these dopants and catalysts, Nb is mainly employed to improve the conductivity and stability of metal oxides [17,19,20,21], and Pt is used to enhance the sensing response and selectivity of sensors [11,18,22].…”
Section: Introductionmentioning
confidence: 99%