No abstract

No abstract

Resistive switching in photocross-linkable polymer memory devices was found to occur in localized areas of the device. In order to elucidate the reason behind the switching, we used focused ion-beam to prepare a cross-section of the device. It was found that after the device was switched to the high conductive state, in certain parts of the device, the electrodes were only about 5 nm apart. This was probably caused by a combination of high electric field and metal injection into the polymer film. Gold injection into the polymer film by locally enhanced electric field was confirmed by transmission electron microscope-energy dispersive x-ray analysis. This model was in agreement with both the temperature dependent and transient behavior of our device. We conclude that the non-uniformities at the nanoscale interface of the electrode dominated the device characteristics while the polymer played only a secondary role.

Reliability studies on Ta 2 O 5 high-κ dielectric metal-insulator-metal capacitors prepared by wet anodization J. Vac. Sci. Technol. B 29, 01AB10 (2011); 10.1116/1.3532823 Pulse-induced low-power resistive switching in Hf O 2 metal-insulator-metal diodes for nonvolatile memory applicationsHigh-temperature conduction behaviors of HfO 2 / TaN -based metal-insulator-metal capacitors

No abstract