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A dual-band quasi-single-layer absorber based on multimode resonance is proposed. Different from the traditional multi-substrate or multi-resonator composite structure, by virtue of stub- and slot-loaded technologies, only one single-substrate printed resonator is utilized to achieve multi-mode resonant characteristics for two absorption bands. The bandwidth of the two absorption bands can be adjusted by structural parameters. Through the detailed analysis of the surface current distribution in different modes, the generation principle of the multi-mode dual-band characteristic is revealed. Finally, the dual-band absorber is fabricated and measured, achieving dual-band absorptions in the frequency range of 7.64–10.8 GHz and 15.04–17.32 GHz with fractional bandwidth (FBW) of 34.3% and 14.1%, respectively. The advantages of low-profile simple structure and controlled dual bandwidth make it very suitable for radar detection and stealth fields.

In this article, a class of filtering linear polarization converters based on single quasi-single-layer triangular resonator unit is proposed. By loading the stub-line and slot lines, the degenerate modes of the single fundamental resonant mode of an isosceles right-angle patch are separated into two for a second-order filtering characteristic, and two additional resonant modes are then generated for the second conversion band. Attributed to the mixed electric and magnetic coupling in the coupling section of the loaded stub-line, several conversion zeros are introduced at the same. As the contribution of this work, multiple resonant modes and conversion zeros can be independently controlled by the corresponding parameters, enabling second-order single- and dual-band response with multi-mode high selectivity side-band and harmonic rejection characteristics out-of-band. With the detailed analysis of the surface current and field distributions, the polarization conversion mechanisms are revealed. Finally, the single-band and dual-band linear polarization converters are processed, and the measured and simulated results are in good agreement. As expected, the two polarization converters show excellent filtering features, which is beneficial for improving modulation accuracy and avoiding unwanted electromagnetic interference in various application of multi-passband and multi-functional metasurfaces.

We aimed to explore the protective effect of genipin on retinal pigment epithelial (RPE) cells under hypoxia and hyperglycemia. RPE cells were cultured under hyperglycemia and hypoxia mimicking agent DFX. The cells were then exposed to genipin (10–50 μM), genipin + phospha-tidylinositol (3,4,5) trisphosphates (PIP3) as phosphoinositide 3-kinase (PI3K) inhibitor, and genipin+ PI3K agonist, followed by CCK-8 assay to detect the cell viability. Western blot determined PI3K/protein kinase B (AKT) pathway, and apoptosis- and anti-apoptosis-related proteins levels. MitoSOXTM Red kit was conducted to analyze reactive oxygen species (ROS) content. Finally, confocal immunofluorescence staining assessed nuclear translocation of Nuclear factor erythroid-derived 2-like 2 (Nrf2). Hyperglycemia and hypoxia treatment induced injury in RPE cells, with nuclear translocation of Nrf2 and ROS production. Importantly, administration of genipin alleviated the injury, up-regulated Bcl-2 expression, inhibited caspase-3 activity and nuclear translocation of Nrf2, and down-regulated the level of Bax and ROS. In addition, genipin pretreatment obviously increased PI3K and Akt phosphorylation and promoted cell proliferation and viability. On the contrary, PI3K inhibitor inactivated PI3K/AKT and decreased cell viability while PI3K agonist showed the opposite effect. Genipin prevented oxidative stress and apoptosis induced by hyperglycemia and hypoxia through PI3K/Akt signaling pathway.