No abstract

The operative outcome of microvascular decompression in patients with typical trigeminal neuralgia was better than that of patients with atypical trigeminal neuralgia, which perhaps related to short duration, late onset of pain, limited distribution, artery compression, and complete operative decompression.

To strengthen the downscaling potential of top-gate amorphous oxide semiconductor (AOS) 
thin-film transistors (TFTs), the ultra-thin gate insulator (GI) was comparatively implemented using the atomic-layer-deposited (ALD) AlOx and HfOx. Both kinds of high-k GIs exhibit good insulating properties even with the physical thickness thinning to 4 nm. Compared to the amorphous indium-gallium-zinc oxide (a-IGZO) TFTs with 4-nm AlOx GI, the 4-nm HfOx enables a larger GI capacitance, while the HfOx-gated TFT suffers the higher gate leakage current and poorer subthreshold slope, respectively originating from the inherently small band offset and the highly defective interface between a-IGZO and HfOx. Such imperfect a-IGZO/HfOx interface further causes the noticeable positive bias stress (PBS) instability. Both ALD AlOx and HfOx were found to react with the underneath a-IGZO channel to generate the interface defects, such as metal interstitials and oxygen vacancies, while the ALD process of HfOx gives rise to a more severe reduction of a-IGZO. Moreover, when such a defective interface is covered by the top gate, it cannot be readily restored using the conventional oxidizing post-treatments and thus desires the reduction-resistant pre-treatments of AOSs.