Nonlinear carrier relaxation/recombination dynamics and the resultant stimulated terahertz (THz) photon emission with excitation of surface plasmon polaritons (SPPs) in photoexcited monolayer graphene has been experimentally studied using an optical pump/THz probe and an optical probe measurement. We observed the spatial distribution of the THz probe pulse intensities under linear polarization of optical pump and THz probe pulses. It was clearly observed that an intense THz probe pulse was detected only at the area where the incoming THz probe pulse takes a transverse magnetic (TM) mode capable of exciting the SPPs. The observed gain factor is in fair agreement with the theoretical calculations. Experimental results support the occurrence of the gain enhancement by the excitation of SPPs on THz stimulated emission in optically pumped monolayer graphene.

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We experimentally demonstrate the efficacy of using slant field plates (field plates with the plate-to-channel gap gradually increasing away from the gate edge) on the breakdown voltage. We develop a new fabrication process using a multi-step SiCN film such that both slant and conventional field plates are fabricated simultaneously. Consequently, we fabricate 230-nm-gate AlGaN/GaN HEMTs with several types of field plates. The slant field plate increases the breakdown voltage by 66% more than that of the conventional field plate. The advantages of using slant field plates to increase the breakdown voltage are experimentally confirmed for the first time.

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