In the past few years, the power conversion efficiencies (PCEs) of perovskite solar cells (PSCs) have increased from 3.81 to 25.2%, surpassing those of all almost all thin films solar cells. For high-performance PSCs, it is pivotal to finely regulate the charge dynamics and light management between perovskite and charge-transfer materials to balance the trade-off between optical and electrical properties. In this study, a hemispherical core–shell silver oxide (AgO x ) @ silver nanoparticles (Ag NPs) were grown onto the surface of the mesoporous titanium dioxide (m-TiO2) electron-transport layer (ETL) to improve the photogenerated charge transfer without sacrificing the stability of the devices. The results show that the electrical properties of m-TiO2 have been enhanced owing to the injection of a hot carrier in Ag NPs into the m-TiO2 ETL filling the trap states of m-TiO2. However, AgO x on the Ag NP surfaces can isolate the touch between Ag NPs and perovskite, thereby prohibiting the perovskite decomposition. Compared with the control device, the PCE was increased from 17.87 to 20.33% for the device with HOAPs. In the meantime, the long-term stability of the PSCs is not sacrificed, which is pivotal for fabricating PSCs and optoelectronic devices.

Low-cost and efficient interfacial layer construction with the required charge selectivity and compatibility is necessary for nanostructured solar cells, and the proper integration of the interfacial layer with the light-trapping system is required to improve the power conversion efficiency of the cell. Herein, low-cost Si nanowires-based solar cells with tunneling heterojunctions are developed by the deposition of MoO x and spin-coating of Cs 2 CO 3 as the carrier-selective layers. The power conversion efficiency of 16.9% for a device of 4 cm 2 in area is achieved by Si nanowires solar cells by the self-assembly of ultra-thin SiO x as the surface tunneling passivation layer. Self-assembly is realized with an ultraviolet O 3 treatment process at room temperature. Quasi-steady-state photoconductance, microwave-detected photoconductance decay, and constant current-voltage measurements are used to characterize the passivation quality and tunneling transportation properties of the ultra-thin SiO x layers. Interfacial charge recombination is suppressed and effective carrier tunneling properties are developed by the growth of ≈1.5 nm thick SiO x layers on the surfaces of the Si nanowires. This proposed Si nanowires solar cell architecture featuring tunneling heterojunctions achieves high performance and may be suitable for fabricating industrialized Si nanowires-based photovoltaic devices through a cost-effective, simple, and low-temperature process.

UC spectra of KLa(MoO4)2: Yb3+/Tm3+ at different temperature.

SrWO4 phosphors doped with Ho3+(Er3+)/Yb3+ are successfully prepared by a high temperature solid-state reaction method.

The BaIn2O4: Yb3+/Tm3+/RE3+ (RE=Er3+, Ho3+) upconversion (UC) phosphors are synthesized with a sol-gel method. The Rietveld refinement based on the XRD data proved that the In3+ ions are replaced by...