A scanning reflection electron microscope (SREM) combined with a scanning tunneling microscope (STM) has been developed for the purpose of nanoscale structure fabrication under ultrahigh vacuum conditions. A STM unit consists of a piezoelectric tube scanner and an inch runner for coarse and fine approach of a STM tip. A sample holder and the STM unit have six drive axes relative to an electron gun for simultaneous observation by SREM and STM. Energy-dispersive x-ray spectroscopy equipment is also installed for surface sensitive elemental analysis. It has been demonstrated that on a Si(111)7×7 surface atomic steps and 7×7 unit, cells can be observed in the SREM and STM images, respectively, and that surface elements with less than 1 ML thickness are detectable.

The in-depth distribution of residual stresses in shot-peened steels was measured by using high energy X-rays posed to estimate the stress value of the distributed residual stress. The new method was a combination of the sidethe distribution obtained by the surface removal method.

The Si(111)-7×7 area surrounded by the Si(111)-√3×√3R30°-Ga region has been observed by scanning tunneling microscopy during the thermal desorption of Ga atoms at ∼600 °C and after the desorption. The 7×7 area exhibits triangular and strip patterns on the nanometer scale for the Si(111) substrates tilting toward the [112̄] and [1̄1̄2] directions, respectively. This is because faulted halves of the 7×7 reconstruction are adjacent to the √3×√3-Ga area on the boundary between the 7×7 and √3×√3-Ga areas during Ga desorption. It has been found that strip patterns with nanometer-scale precision are formed on the Si(111) substrates tilting toward the [1̄1̄2] direction.

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A scanning interference electron microscope (SIEM) has been developed for periodical nanostructure fabrication. This system can produce electron interference fringes with a period from 2 nm to several tens of micrometers. Fabrications of periodical nanostructures with 23 to 170 nm periods have been demonstrated by transferring the electron interference fringe onto the semiconductor surfaces.