Degradation by acetic acid for crystalline Si photovoltaic modules during damp-heat test was analyzed by observing electrical and electroluminescence properties. Change in electroluminescence images is explained based on corrosion of electrodes by acetic acid. Difference in the pattern of the dark region in electroluminescence image is also discussed.

Potential-induced degradation (PID), which brings about a large rapid decrease in output power has been observed in megawatt-scale photovoltaic power plants. Na diffusion from a cover glass to a cell through an encapsulant is possibly the direct origin of PID for p-type crystalline Si photovoltaic modules. On the other hand, PID is suppressed when using an ionomer encapsulant instead of a conventional ethylene vinyl acetate encapsulant. Some researchers consider that the reason is the suppression of Na diffusion when using an ionomer encapsulant. However, there has been no direct observation of Na diffusion behavior to the best of our knowledge for the modules prepared using an ionomer encapsulant. In this study it was found for the first time that Na diffuses in p-type multicrystalline Si photovoltaic modules prepared using an ionomer encapsulant without PID, suggesting that Na diffusion is not a sufficient condition for PID to occur. Another feature of PID is the recovery phenomenon induced by applying reverse voltage after PID occurs. In this study it was also found that reverse voltage application in the initial stage is effective for suppressing PID.

A guiding principle for highly reliable crystalline Si photovoltaic modules, especially those with high tolerance to acetic acid generated by hydrolysis reaction between water vapor and an ethylene-vinyl acetate (EVA) encapsulant, is proposed. Degradation behavior evaluated by the damp heat test strongly depends on Ag finger electrodes and also EVA encapsulants. The acetic acid concentration in EVA on the glass side directly determines the degradation behavior. The most important factor for high tolerance is the type of Ag finger electrode materials when using an EVA encapsulant. Photovoltaic modules using newly developed crystalline Si cells with improved Ag finger electrode materials keep their maximum power of 80% of the initial value even after the damp heat test at 85 °C and 85% relative humidity for 10000 h. The pattern of dark regions in electroluminescence images is also discussed on the basis of the dynamics of acetic acid in the modules.

The influences of both high-voltage stress and hygrothermal stress were studied for homojunction and heterojunction crystalline Si photovoltaic (PV) modules. In order to separately access the influence of these stresses, these PV modules were subjected to sequential tests with hygrothermal stress and high-voltage stress for various stress durations of each test. It was found that for p-type homojunction crystalline Si PV modules hygrothermal stress applied in advance considerably enhances potential-induced degradation (PID) by high-voltage stress. High-voltage stress applied in advance also accelerates finger-electrode degradation by hygrothermal stress. It was also clarified that hygrothermal stress for short duration applied in advance considerably enhances PID by high-voltage stress for n-type heterojunction crystalline Si PV modules. The possible mechanisms for these accelerated degradation phenomena by the combined stresses are presented.

Potential-induced degradation (PID) of thin-film Si photovoltaic (PV) modules was investigated. The characteristics of PID phenomena of thin-film Si PV modules are markedly different from those of crystalline Si PV modules. Not only performance loss but also linear-shape and spot-shape delamination was observed after negative voltage application. Recovery from PID was also observed after positive voltage application. However, rapid progression of PID was found after the second negative voltage application after recovery from the initial PID. The root cause of PID of thinfilm Si PV modules is thought to be the delamination between a transparent conductive oxide film and a glass substrate. Such degradation accompanied by delamination was also observed in thin-film Si PV modules exposed outside for about 5 years.