GaSb and GaSbxAs1-x single crystal thin films were successfully grown by molecular beam epitaxy. Undoped GaSb showed p-type conduction, and Te was found to be effective as a donor impurity for the MBE-grown GaSb. An in-depth profile of the electrical property of these films revealed that many defects are contained in the epitaxial layer near the interface between the grown layer and the substrate. GaSbxAs1-x films with entire composition were prepared, and the energy gap measured by photoabsorption shows a downward bowing as a function of the composition.

SYNOPSISPolypropylene films were treated with the CHC13 plasma, and their chemical composition was analyzed with XPS and ART IR spectroscopy. The CHC13 plasma irradiation made polypropylene films hydrophilic. The advancing contact angle decreases from 95" for the untreated to about 73" for the CHC13 plasma-treated films. In the CHC13 plasma irradiation, the chlorination occurs, and C -C1, C -C12, and C -C13 units are formed in the polypropylene films. Simultaneously with the chlorination, unsaturated units ( C = C and conjugated C = C units) are formed from dehydrogen chlorination of the chlorinated products, but the oxygen incorporation into the films is low. The CHC13 plasma is preferred in chlorination of polypropylene films to the Cc1, plasma.

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