An approach of enhanced light-trapping in a thin-film silicon solar cell by adding a two-filling-factor asymmetric binary grating on it is proposed for the wavelength of near-infrared. Such a grating-on-thin-film structure forms a guided-mode resonance notch filter to couple energy diffracted from an incident wave to a leakage mode of the guided layer in the solar cell. The resonance wave coupled between two-filling-factor gratings would laterally extend the optical power and induce multiple bounces within the active layer. The resonance effect traps light in the cell enhancing its absorption probability. A dynamic light-trapping behaviour in solar cells is observed. A photon dwelling time is proposed for the first time to quantify the light-trapping effect. Moreover, the light absorption probability is also quantified. As compared the grating-on-thin-film structure with the one of planar silicon thin film, simulation results reveal that it is 3-fold enhancement in the light absorption within a spectral range of 920-1040 nm. Moreover, such an enhancement can be maintained even the incident angle of near-IR broadband light wave varies up to +/-40 degrees.

An optical interconnect transmitter based on guided-wave silicon optical bench is demonstrated. The guided-wave silicon optical bench (GW-SiOB) is developed on a silicon-on-insulator (SOI) substrate. The three-dimensional guided-wave optical paths on the silicon optical bench are realized using trapezoidal waveguides monolithically integrated with 45° micro-reflectors. Such three-dimensional guided-w ave optical paths of SiOB would simplify and shrink the intra-chip optical interconnects located on a SOI substrate. The clearly open eye patterns operated at a data rate of 5 Gbps verifies the proposed GW-SiOB is suitable for intra-chip optical interconnects.

A silicon on insulator (SOI)-based trapezoidal waveguide with a 45° reflector for noncoplanar optical interconnect is demonstrated. The proposed waveguide is fabricated on an orientation-defined (100) SOI substrate by using a single-step anisotropic wet-etching process. The optical performances of proposed waveguides are numerically and experimentally studied. Transmittance of -4.51 dB, alignment tolerance of ±20 μm, cross talk of -53 dB, and propagation loss of -0.404 dB/cm are achieved The proposed waveguide would be a basic element and suitable for the future intrachip optical interconnects.

No abstract

A whole on-chip optical interconnects integrated with laser, photodetectors, driver IC, and amplifier IC is experimentally demonstrated. A 10-Gbps error-free data transmission is achieved as driving current of laser is 10 mA.