This paper reports extensive modelling and analysis of the temperature dependence on the device characteristics of the AlGaN/GaN high electron mobility transistors (HEMTs). A physics-based model is proposed in this study in order to correctly predict the gate flat-band Schottky barrier height, energy band Fermi-level (E C -E F ) at the AlGaN/GaN interface, two-dimensional electron gas sheet density, gate threshold and (I D -V G ) at sub-threshold voltages, and drain current-voltage (I D -V D ) characteristics under various high-temperature conditions. The analytical results are then verified by comparing with the laboratory measurement as well as the numerical results obtained from the Sentaurus TCAD simulation. The proposed model is found to be useful for power electronic device designers on the prediction of the AlGaN/GaN HEMT device performance under high-temperature operation.

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In order to examine the feasibility of full wide‐bandgap GaN‐based converters in aerospace power conversion applications, this paper proposes a monolithic DC–DC buck converter design with integrated high‐side gate driver, over‐current protection, and pulse‐width‐modulation feedback control circuits based on full AlGaN/GaN MIS‐HEMT configuration. After model calibration of the DC and transient behaviors with fabricated normally‐ON and normally‐OFF AlGaN/GaN MIS‐HEMT devices, the DC–DC buck converter is simulated. The circuit converts the input 100 V down to an adjustable range at 1 MHz switching frequency. The over‐current protection function can properly protect the converter at a preset over‐current threshold. The converter can respond to the load current and line input voltage fluctuations due to the integrated feedback control. These results illustrate the performance of proposed all‐GaN DC–DC power converter design.

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