Smart GaN platform: Performance &amp; challenges

Tsai, Chun-Lin; Wang, Yun-Hsiang; Kwan, Man Ho; Chen, P.-C.; Yao, F.-W.; Liu, S.-C.; Yu, Jingshu; Yeh, Chih-Shen; Su, R.Y.; Wang, W.; Yang, Wen; Wong, King-Yuen; Lin, Yan; Lin, Ming-Chieh; Wu, Hao; Chen, C.-M.; Yu, Chan-Hun; Wu, Chunlei; Chang, Ming Hsung; You, Jaehee; Huang, Tsun-Che; Wang, S.-P.; Tsai, Leo; Chern, C. H.; Tuan, H.C.; Kalnitsky, A.

doi:10.1109/iedm.2017.8268488

Cited by 65 publications

(19 citation statements)

References 6 publications

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“…GaN-on-Si is acknowledged as a promising device platform for further exploration of commercial high-power modules with higher power density [4,9,33,34]. Moreover, owing to the availability of both depletion-mode and enhancement-mode of GaN HEMTs, they have invoked research interests and efforts in the IC industry for complementary logic applications [9,31]. This paper reviews the recent progress in the GaN-on-Si normally-OFF AlGaN/GaN HEMTs based on recent literature.…”

Section: Algan/gan Hemt Devicementioning

confidence: 99%

“…Several advanced types of AlGaN/GaN FET devices have been explored recently. Among of them, the GaN MOS or MIS (metal-insulator-semiconductor) HEMTs has drawn most of the attention [9,14,28,43], so do the MISHEMTs with high-K gate dielectric [17,31,44]. Other new devices with a regrowth of AlGaN layer [41], or a regrowth of GaN drift channel layer [45] have also been reported.…”

Section: Algan/gan Hemt Devicementioning

confidence: 99%

“…Nitride-based wide band-gap semiconductors (WBS), such as GaN and related alloys, have been intriguing to high power and high frequency researches and applications over the past two decades, as reviewed in the literatures [1][2][3][4][5][6][7][8][9][10]. They are promising because of their intrinsic superior material properties, especially with their outstanding electrical performance exhibited in the GaN-based high-electron mobility transistors (HEMTs), also known as the heterojunction field-effect transistor (HFET).…”

Section: Introductionmentioning

confidence: 99%

“…Besides the hybrid approach with GaN HV-HEMT and Si LV-MOSFET in a cascade configuration, AlGaN/GaN-on-Si HEMTs with direct GaN gate control [40,41] have attracted much attention commercially in the recent years due to its size thus cost. GaN-on-Si is acknowledged as a promising device platform for further exploration of commercial high-power modules with higher power density [4,9,33,34]. Moreover, owing to the availability of both depletion-mode and enhancement-mode of GaN HEMTs, they have invoked research interests and efforts in the IC industry for complementary logic applications [9,31].…”

Section: Introductionmentioning

confidence: 99%

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A Comprehensive Review of Recent Progress on GaN High Electron Mobility Transistors: Devices, Fabrication and Reliability

et al. 2018

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GaN based high electron mobility transistors (HEMTs) have demonstrated extraordinary features in the applications of high power and high frequency devices. In this paper, we review recent progress in AlGaN/GaN HEMTs, including the following sections. First, challenges in device fabrication and optimizations will be discussed. Then, the latest progress in device fabrication technologies will be presented. Finally, some promising device structures from simulation studies will be discussed.

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Section: Algan/gan Hemt Devicementioning

confidence: 99%

Section: Algan/gan Hemt Devicementioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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A Comprehensive Review of Recent Progress on GaN High Electron Mobility Transistors: Devices, Fabrication and Reliability

et al. 2018

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“…makes GaN suitable for RF and power conversion applications [8]. Especially the GaN High Electron Mobility Transistors (HEMTs) exhibit a 2-Dimentional Electron Gas (2DEG) channel and well fit the lateral integration [9], [10], which is a promising road to fully exploit the merits of GaN material.…”

Section: Introductionmentioning

confidence: 99%

GaN Power Integration for High Frequency and High Efficiency Power Applications: A Review

et al. 2020

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High frequency and high efficiency operation is one of the premier interests in the signal and energy conversion applications. The wide bandgap GaN based devices possess superior properties and have demonstrated exceeding performance than Si or GaAs devices. In order to further exploit the potential of GaN electronics, monolithic power integration is proposed. Firstly, this paper discusses the structure and properties of GaN power devices to explain the choice of lateral integration in the view of GaN power ICs. Then the state-of-the-art performance of GaN power integration in two major application areas is reviewed, which are the microwave power amplification and DC-DC power conversion. The GaN power integration technologies in MMIC platforms are summarized in terms of the gate length, operation frequency and power added efficiency of ICs. On the other hand, the smart GaN power IC platforms have boosted the development of DC-DC power converters. Demonstrations of high frequency (>1 MHz) and high efficiency (>95 %) converters with various kinds of integration technology and topology are reviewed. Lastly novel integration schemes and methods are introduced to stimulate new thoughts on GaN power integration road.

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Investigation of trapping/de-trapping dynamics of surface states in AlGaN/GaN high-electron mobility transistors based on dual-gate structures

Luan

Jiang

Huang

et al. 2023

Microelectronic Engineering

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Smart GaN platform: Performance & challenges

Cited by 65 publications

References 6 publications

A Comprehensive Review of Recent Progress on GaN High Electron Mobility Transistors: Devices, Fabrication and Reliability

A Comprehensive Review of Recent Progress on GaN High Electron Mobility Transistors: Devices, Fabrication and Reliability

GaN Power Integration for High Frequency and High Efficiency Power Applications: A Review

Investigation of trapping/de-trapping dynamics of surface states in AlGaN/GaN high-electron mobility transistors based on dual-gate structures

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