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This paper presents a stochastic traffic signal optimization method that consists of the CORSIM microscopic traffic simulation model and a heuristic optimizer. For the heuristic optimizer, the performance of three widely used optimization methods (i.e., genetic algorithm, simulated annealing and OptQuest Engine) was compared using a real world test corridor with 12 signalized intersections in Fairfax, Virginia, USA. The performance of the proposed stochastic optimization method was compared with an existing signal timing optimization program, SYNCHRO, under microscopic simulation environment. The results indicated that the genetic algorithm-based optimization method outperforms the SYNCHRO program as well as the other stochastic optimization methods in the optimization of traffic signal timings for the test corridor.

For arithmetic applications, we extend and refine our results in [10] to allow ramifications in a minimal way. Starting with a possibly ramified quadratic extension F ′ /F of function fields over a finite field in odd characteristic, and a finite set of places Σ of F that are unramified in F ′ , we define a collection of Heegner-Drinfeld cycles on the moduli stack of PGL 2-Shtukas with r-modifications and Iwahori level structures at places of Σ. For a cuspidal automorphic representation π of PGL 2 (A F) with square-free level Σ, and r ∈ Z ≥0 whose parity matches the root number of π F ′ , we prove a series of identities between (1) The product of the central derivatives of the normalized L-functions L (a) (π, 1 2)L (r−a) (π ⊗ η, 1 2), where η is the quadratic idèle class character attached to F ′ /F , and 0 ≤ a ≤ r; (2) The self intersection number of a linear combination of Heegner-Drinfeld cycles. In particular, we can now obtain global L-functions with odd vanishing orders. These identities are function-field analogues of the formulas of Waldspurger and Gross-Zagier for higher derivatives of L-functions.

Low-temperature fabrication of thin-film dielectrics is essential for various applications including flexible/stretchable electronics, monolithic threedimensional integrated circuits, and large-area sensors/displays. Silicon dioxide is one of the most extensively used dielectric materials, but conventional deposition methods such as plasma-enhanced chemical vapor deposition and atomic layer deposition require relatively high temperatures. In this study, a high-quality SiO 2 thin film was fabricated at low temperatures below 150 °C using sputtering and hydrogen plasma treatment. The sputtered SiO 2 thin film exhibited low leakage current (3 × 10 −7 A/cm 2 at 3 MV/cm) and a high breakdown field (11.33 MV/ cm). After hydrogen plasma treatment was carried out under optimized conditions, the interface trap density between Si and sputtered SiO 2 was minimized to 7 × 10 11 cm −2 eV −1 , which is comparable to the corresponding value for thermally grown SiO 2 . The results of X-ray photoelectron spectroscopy and secondary-ion mass spectroscopy confirmed that the hydrogen treatment effectively passivates dangling bonds and reduces the portion of oxygen-deficient species.