TiO 3 (NKN-BZ-BLT) thin films with a thickness of about 2.0 mm were fabricated on a Pt/ (001)MgO substrate by pulsed laser deposition (PLD). The X-ray diffraction pattern (XRD) showed that the NKN-BZ-BLT thin films that were oriented in both the 001 pt and the 101 pt directions [determined by pseudo-tetragonal perovskite (pt)] were grown on the Pt/(001)MgO substrate. A rocking curve measurement revealed that the fluctuations of the crystalline orientation of the 001 pt -and 101 pt -oriented NKN-BZ-BLT grains are very small. The reciprocal space map and pole figure showed that the 001 pt -oriented NKN-BZ-BLT grains epitaxially grew on the Pt/(001)MgO substrate. On the other hand, the 010 pt axis (existing in the in-plane) of the 101 pt -oriented NKN-BZ-BLT grains rotated by 45 for the 100 axis (existing in the in-plane) of the (001)MgO substrate. The dielectric constant " r and the dielectric loss tan of the NKN-BZ-BLT thin films were 682 and 0.076 at 1 kHz, respectively. The P-E hysteresis loops of the NKN-BZ-BLT thin films showed clear ferroelectricity. The remanent polarization P r and coercive electric field E c were 24.5 mC/cm 2 and 29.3 kV/cm, respectively. The NKN-BZ-BLT thin films exhibited larger P r values than NKN-BZ-BLT ceramics. #

O 3 (NKLNTS) thin films with a thickness of about 1.4 mm were fabricated on Pt/(001)MgO substrate, on which an NaNbO 3 buffer layer was introduced, by pulsed laser deposition (PLD). The X-ray diffraction pattern (XRD) showed that the 001 orientated NKLNTS thin films were grown on Pt/(001)MgO substrate. A rocking curve measurement revealed that the fluctuation of the crystalline orientation of the 001 orientated NKLNTS thin films is very small. The lattice parameters of the 001 orientated NKLNTS thin films were a ¼ 0:3911 nm and c ¼ 0:3942 nm, determined by reciprocal space map. The dielectric constant, " r , and the dielectric loss, tan , of the NKLNTS thin film were 398 and 0.22 at 1 kHz, respectively. The large tan is due to NKLNTS having a morphotropic phase boundary region around room temperature. The P-E hysteresis loops of the NKLNTS thin films showed clear ferroelectricity. The remanent polarization, P r , and coercive electric field, E c , were 26.3 mC/cm 2 and 28.6 kV/cm, respectively. The NKLNTS thin films exhibited larger P r value than NKLNTS ceramic. #

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0.92(Na0.5K0.5)NbO3–0.06BaZrO3–0.02(Bi0.5Li0.5)TiO3 (NKN–BZ–BLT) thin films were fabricated on a (111)Pt/Ti/SiO2/(100)Si substrate by pulsed laser deposition (PLD). The quality of the NKN–BZ–BLT thin films was improved by introducing an NKN–BZ–BLT buffer layer, which was deposited at a high substrate temperature of 850 °C. An X-ray diffraction pattern (XRD) showed that the 100pt preferential-oriented NKN–BZ–BLT thin films [on the basis of a pseudotetragonal perovskite (pt) structure] were obtained without and with buffer layers. From the rocking curves, the crystallinity of the film was slightly improved by introducing the buffer layer. SEM images showed that the grain size was increased and cracks were eliminated by introducing the buffer layer. The dielectric constant of the films was comparable to that of NKN–BZ–BLT ceramics. The P–E hysteresis loops showed that the remanent polarization and spontaneous polarization of the films increased with the increase in the thickness of the buffer layer. The NKN–BZ–BLT film with a 0.8-µm-thick buffer layer exhibited a remanent polarization of 6.7 µC/cm2 and a spontaneous polarization of 28.0 µC/cm2. This improvement of the ferroelectric properties would be due to the relaxation of the tensile stress in the presence of the buffer layer.