No abstract

The wurtzite structure of ZnSe, Zn 0.49 Cd 0.51 Se and Zn 0.23 Cd 0.25 Mg 0.52 Se layers grown on Bi 2 Se 3 /sapphire (0001) by Molecular Beam Epitaxy (MBE) is reported. Structure characterization is studied by two-dimensional X-ray diffraction. Pole figures are calculated for cubic and hexagonal planes of the (Zn,Cd,Mg)Se family and compared to their expected values. The targeted wurtzite plane was (11-22), while the cubic ones were the (220) and (311). The results show that, under our MBE growth conditions, ZnSe, Zn 0.49 Cd 0.51 Se and Zn 0.23 Cd 0.25 Mg 0.52 Se layers prefer to form the hexagonal (wurtzite) phase rather than the cubic one when grown on Bi 2 Se 3 /sapphire in (0001) direction. These results have implications for the next generation devices combining semiconductors and topological insulator materials.