The article describes the methods for producing thin films and structures based on SiC, GaN and their SiC – AlN and Al – GaN solid solutions, as well as mathematical models of film growth and properties-behavior of the I–V characteristics of heterostructures. Two models were developed for producing thin films and heterostructures based on SiC, GaN and their solid solutions. The first model makes it possible to determine the sputtering coefficient when producing films by high-frequency magnetron sputtering. In the second quantum-mechanical model, the equation for the gap of the mean field of condensate was built and the growth rate of a film on the crystalline substrate was determined. The current-voltage characteristic of the transistor based on the AlGaN / GaN heterosystem was provided. The models for the growth of heterostructure films made it possible to modify the technologies for producing perfect SiC crystals and SiC – AlN solid solutions. It was possible to offer a pilot plant for growing SiC crystals with improved control over the modes of induction high-temperature heating of the growth crucible.

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It was found that at the stage of fast spreading (τ≤ 0,02c) at constant driving force within the wetting perimeter, the following exerts the main impact on the spreading kinetics: inertial forces that prevent spreading and change their sign when the speed slows, viscous resistance forces, the influence of which increases in proportion to the growth of the thickness of the boundary layer and vertical forces, which begin to appear when the spreading velocity slows down.

The study proposes the self-consistent theory that combines an activation model, a free volume model and a cluster model. The theory makes it possible to explain why the flow of fluid in slip conditions requires extremely minimal tangential stresses and describes the real structure of the fluid in the boundary layer, as well as to explain why the fluid is almost not squeezed out of the capillary gap.

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