Hafnium oxide (HfO 2 ) films were grown on SiO 2 /Si substrates by a sol-gel method, and their crystalline structure, microstructure and electrical properties were investigated. X-ray diffraction analysis indicated that the monoclinic HfO 2 films could be obtained by annealing at 500°C. A transmission electron microscopy (TEM) image showed that the films were grown as a spherulite grain structure with a mean grain size of approximately 15 nm. The dielectric constant of the HfO 2 films of 300 nm was approximately 21.6, and the current-voltage measurements showed that the leakage current density of the HfO 2 films was approximately 1.14×10 −5 A/cm 2 at an applied electric field of 100 kV/cm. The sol-gel method-fabricated HfO 2 films are concluded to be feasible for MEMS applications, such as capacitive-type MEMS switches.

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