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The reactive plasma sputtering technique is used to obtain a boron diffusion source in the form of borosilicate glass (BSG). Physlcal and chemical properties of the BSG films are investigated. Diffusion parameters of B in Si and SiO, are obtaincd in the temperature range between 950 and 1200 "C. I/ZOHIIO-IIJIa3MeHHbIfi \leTOJ ~IeaHTPIBHOrO paCIIhIJIeHllX IIC110JIb30BaH HJIH IIOJIJ"4eHHFi BaHhI ii)113LIYeCKHe H XHMIIYeCIiHC CBOliCTBa TI;IeIIOK ECC. nOJIyqeHb1 ~Hi~)~)Y3HO€IIIhIe mTownma H L I ? ) $~~I I H F o p B m a e IIJICHOK 6opocm~IKaTIIoro cTeIma (ECC). Mccsejo-rrapanieTpbr 6opa B Si H SiO, B miTcpBa;re TeMnepaTyp OT 950 ;lo 1200 "C.

Indium phosphide nanowires (InP NWs) are accessible at 440 °C from a novel vapor phase deposition approach from crystalline InP sources in hydrazine atmospheres containing 3 mol % H2O. Uniform zinc blende (ZB) InP NWs with diameters around 20 nm and lengths up to several tens of micrometers are preferably deposited on Si substrates. InP particle sizes further increase with the deposition temperature. The straightforward protocol was extended on the one-step formation of new core-shell InP–Ga NWs from mixed InP/Ga source materials. Composite nanocables with diameters below 20 nm and shells of amorphous gallium oxide are obtained at low deposition temperatures around 350 °C. Furthermore, InP/Zn sources afford InP NWs with amorphous Zn/P/O-coatings at slightly higher temperatures (400 °C) from analogous setups. At 450 °C, the smooth outer layer of InP-Zn NWs is transformed into bead-shaped coatings. The novel combinations of the key semiconductor InP with isotropic insulator shell materials open up interesting application perspectives in nanoelectronics.

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