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0.87 Na 0.5 Bi 0.5 Ti O 3 – 0.13 Pb Ti O 3 thin film has been prepared by metalorganic solution deposition on Pt∕TiO2∕SiO2∕Si and SiO2∕Si substrates. The film shows good switching endurance under bipolar stressing up to 3×1010 switching cycles with a remanent polarization 2Pr of about 3μC∕cm2 and a coercive field Ec of approximate 56kV∕cm. The high frequency C–V curve is indicative of good film/substrate interface characteristics. The film could be used in storage capacitors, CMOS integrated devices, and insulation gate field-effect transistors.