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Purpose The purpose of this paper is to evaluate the effect of post process combinations, e.g. hot isostatic pressing (HIP) only, HIP + T6 heat treatments, and T6 only, with different aging time, on surface properties, microstructure and mechanical properties of stress-relieved AlSi10Mg parts produced by direct laser metal sintering. Design/methodology/approach HIP process and HIP + T6 heat treatments were applied to as stress-relieved direct laser metal sintered (DMLS) AlSi10Mg parts. Aging times of 4 and 12 h are selected to examine the optimum duration. To analyze the advantages of HIP process, a T6 heat treatment with 4 h of aging was also applied. Densities, open porosities and roughness values of as stress-relieved, HIPed, HIP + T6, and T6-only samples were measured. The samples were characterized by OM and SEM together with EDX analysis. An image analysis study was made to evaluate the inner pore structure, thereby to understand the mechanical behavior. Findings HIP process does not cause a significant change in surface porosity; yet it has a positive influence on inner porosity. HIP process results in a microstructure of the aluminum matrix surrounded by a network of micron and nano size Si particles. Additional heat treatment results in larger particles and precipitation. After HIPing, ductility increases but strength decreases. Samples aged 4 h present improved yield and tensile strength but decreased elongation, yet samples aged for 12 h reach a combination of optimum strength and ductility. The lower level of tensile strength and ductility in T6-only condition indicates that HIP process plays a crucial role in elimination of the porosity thus improves the effectiveness of subsequent heat treatment. Originality/value The study investigates the effect of post-process conditions and optimizes the aging time of the T6 heat treatment after HIP process in order to obtain improved mechanical properties. The stress-relieved state was chosen as the reference to prevent distortion during HIPing or heat treatment.

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