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This paper studied an atomic layer etching (ALE) technique with a surface treatment function for InAlN/GaN heterostructures with AlN spacer layers. Various parameters were attempted, and 30 s O2 + 15 W BCl3 was chosen as the optimal recipe. The optimal ALE approach exhibited satisfactory etching results, with regard to the etch-stop effect, compared with other techniques. The atomic force microscopy (AFM) results showed an etching per cycle (EPC) value of 0.15 nm/cycle, with a 0.996 fit coefficient and root mean square (RMS) surface roughness of around 0.61 nm (0.71 nm for as-grown sample), which was the lowest in comparison with digital etching (0.69 nm), Cl2/BCl3 continuous etching (0.91 nm) and BCl3 continuous etching (0.89 nm). X-ray photoelectron spectroscopy (XPS) and scanning transmission electron microscopy with energy dispersive X-ray spectroscopy measurements (STEM/EDS) verified the indium clustered phenomena at the bottom apex of V-pit defects in the epi structure of InAlN/GaN high electron mobility transistors (HEMTs) for the first time, in addition to the surface morphology optimization for the ALE under-etching technique used in this work. The resistor hall effect (Hall) and AFM measurements demonstrated that after 4 or 5 ALE cycles, the two-dimensional electron gas (2-DEG) density and RMS roughness were improved by 15% and 11.4%, respectively, while the sheet resistance (Rsh) was reduced by 6.7%, suggesting a good surface treatment function. These findings were important for realizing high-performance InAlN/GaN HEMTs.

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The new generation of power consumption information acquisition system has increasingly high requirements for local communication business bandwidth, acquisition frequency, and reliability. However, high-speed power line communication(HPLC) is prone to performance degradation due to the influence of new measurement terminals electromagnetic compatibility(EMC). This paper proposes the analysis and improvement method of the influence of new measurement terminals EMC on HPLC. First, the hardware architecture and the characteristics of the new measurement terminals EMC are introduced. Then, the influence of new measurement terminals EMC on HPLC is studied, and the test environment of the influence of new terminals on HPLC is established; Finally, combined with the typical EMC cases analysis of new measurement terminals, the effect of the improvement of the Influence of new measurement terminals EMC on HPLC is verified. The research results show that the HPLC attenuation performance by referring to the method in this paper is significantly improved, and achieves the similar effect as the standard I concentrator. The method in this paper can provide effective technical support for the construction of a new generation of power consumption information acquisition system.