In the process of producing TFT-LCD, the difference in process and material causes the uneven brightness of the panel. In this paper, a system architecture and algorithm are proposed to eliminate the uneven brightness of TFT-LCD's display, which is called the De-mura system to improve the quality of the TFT-LCD. Author KeywordsTFT-LCD, De-mura system, Mura LUT, De-mura Algorithm block.

The strain and dislocation effects in various thickness GaAs/Si samples are studied by means of Raman scattering and Hall measurement at different temperatures. It is observed that the strain effect is insensitive to GaAs layer thickness above 100 nm. Dislocation defects pray an important role on the Hall mobility of the samples. The effect decreases as the thickness of GaAs layer increases.Die Dehnungs-und Versetzungseffekte in GaAs/Si-Proben mit unterschiedlicher Dicke werden mittels Ramanstreuung und Halleffektmessungen bei verschiedenen Temperaturen untersucht.Es wird beobachtet, daB der Dehnungseffekt gegenuber GaAs-Schichtdicken oberhalb 100 nm unempfindlich ist. Versetzungsdefekte spielen eine wesentliche Rolle fur die Hallbeweglichkeit der Proben. Der Effekt nimmt mit zunehmender Dicke der GaAs-Schicht ab.

The MBE GaAs1-xSbx/GaAs strained layer quantum well has been investigated by means of photoreflectance measurement. The energy band structure has been estimated by theoretical fitting with the experimental results. We confirmed that the variations of band structure caused by hydrostatic component of the strain mainly exist in conduction band, and that MBE GaAs1-xSbx/GaAs strained layer quantum well is a typical one of type Ⅱ. The theoretical estimation coincide well with our experimental results.

The Gamma curve of each TFT-LCD panel is different due to the process variation and the material difference. This paper will propose an Auto Gamma adjustment system's architecture and algorithm to adjust the TFT-LCD panel's gamma curve on the production manufacturer line automatically and quickly.