Zhaoke Bian scite author profile

We demonstrate high-performance AlGaN/GaN lateral Schottky barrier diodes (SBDs) with Mo anode and low turn-on voltage of 0.31 V. AlGaN/GaN SBDs with anode to cathode spacing of 6/10/15/20/25 μm achieve a breakdown voltage (BV) of 0.83/1.23/1.62/2.46/2.65 kV, yielding a power figure-of-merit (FOM) of 1.53/1.82/1.77/2.65/2.12 GW cm−2. The power FOM of 2.65 GW cm−2 and BV of 2.65 kV are the best results of AlGaN/GaN SBDs on silicon substrate. Combined with the good dynamic performance with only 10% Ron increase when switched from a −600 V stress for 10 ms, GaN SBDs verify their great promise for future power electronic applications.

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A > 3 kV/2.94 m $\Omega\cdot$ cm² and Low Leakage Current With Low Turn-On Voltage Lateral GaN Schottky Barrier Diode on Silicon Substrate With Anode Engineering Technique

Zhang

Zhou

et al. 2019

IEEE Electron Device Lett.

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Zhaoke Bian

A 1.9 kV/2.61 mΩ·cm2 Lateral GaN Schottky Barrier Diode on Silicon Substrate with Tungsten Anode and Low Turn-On Voltage of 0.35 V

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High-performance lateral GaN Schottky barrier diode on silicon substrate with low turn-on voltage of 0.31 V, high breakdown voltage of 2.65 kV and high-power figure-of-merit of 2.65 GW cm⁻²

A > 3 kV/2.94 m $\Omega\cdot$ cm² and Low Leakage Current With Low Turn-On Voltage Lateral GaN Schottky Barrier Diode on Silicon Substrate With Anode Engineering Technique

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Zhaoke Bian

A 1.9 kV/2.61 mΩ·cm2 Lateral GaN Schottky Barrier Diode on Silicon Substrate with Tungsten Anode and Low Turn-On Voltage of 0.35 V

A 5.8-GHz High-Power and High-Efficiency Rectifier Circuit With Lateral GaN Schottky Diode for Wireless Power Transfer

Lateral GaN Schottky Barrier Diode for Wireless High-Power Transfer Application With High RF/DC Conversion Efficiency: From Circuit Construction and Device Technologies to System Demonstration

High-performance lateral GaN Schottky barrier diode on silicon substrate with low turn-on voltage of 0.31 V, high breakdown voltage of 2.65 kV and high-power figure-of-merit of 2.65 GW cm−2

A > 3 kV/2.94 m $\Omega\cdot$ cm2 and Low Leakage Current With Low Turn-On Voltage Lateral GaN Schottky Barrier Diode on Silicon Substrate With Anode Engineering Technique

Contact Info

Product

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High-performance lateral GaN Schottky barrier diode on silicon substrate with low turn-on voltage of 0.31 V, high breakdown voltage of 2.65 kV and high-power figure-of-merit of 2.65 GW cm⁻²

A > 3 kV/2.94 m $\Omega\cdot$ cm² and Low Leakage Current With Low Turn-On Voltage Lateral GaN Schottky Barrier Diode on Silicon Substrate With Anode Engineering Technique