Combined modulus and impedance spectra are widely employed to explore electrical inhomogeneity and carriers' behaviors in dielectric ceramics based on equivalent circuit. However, discrepancies are found between practical dielectric responses and widely proposed equivalent circuits. Taking ZnO varistor ceramics as an example, a low-frequency dielectric relaxation, which can be detected in practical dielectric spectroscopy, is overlooked in simulated dielectric spectroscopy based on the proposed equivalent circuit according to modulus and impedance spectra. Therefore, equivalent circuits are frequently incomplete because the real low-frequency dielectric response is unable to be characterized from them. The problem originates from debatable understanding of frequency responses in modulus and impedance spectra. The low-frequency peak in modulus spectroscopy is proved originating from DC conductance instead of a real dielectric relaxation and the involvement of DC conductance component makes a low-frequency dielectric relaxation unable to be characterized in modulus spectroscopy. Therefore, improved dielectric spectroscopy eliminating the component of DC conductance is proposed and a clear peak corresponding to the low-frequency dielectric relaxation appears. In addition, a modified equivalent circuit which is in accordance with practical dielectric responses in not only modulus and impedance spectra but also dielectric spectroscopy is presented.

Polyimide has excellent electrical, thermal, and mechanical properties and is widely used as a dielectric material in electrical equipment and electronic devices. However, the influencing mechanism of sample thickness on electrical breakdown of polyimide has not been very clear until now. The direct current (DC) electrical breakdown properties of polyimide as a function of thickness were investigated by experiments and simulations of space charge modulated electrical breakdown (SCEB) model and charge transport and molecular displacement modulated (CTMD) model. The experimental results show that the electrical breakdown field decreases with an increase in the sample thickness in the form of an inverse power function, and the inverse power index is 0.324. Trap properties and carrier mobility were also measured for the simulations. Both the simulation results obtained by the SCEB model and the CTMD model have the inverse power forms of breakdown field as a function of thickness with the power indexes of 0.030 and 0.339. The outputs of the CTMD model were closer to the experiments. This indicates that the displacement of a molecular chain with occupied deep traps enlarging the free volume might be a main factor causing the DC electrical breakdown field of polyimide varying with sample thickness.

No abstract

No abstract

No abstract