Next-generation nano- and quantum devices have increasingly complex 3D structure. As the dimensions of these devices shrink to the nanoscale, their performance is often governed by interface quality or precise chemical or dopant composition. Here, we present the first phase-sensitive extreme ultraviolet imaging reflectometer. It combines the excellent phase stability of coherent high-harmonic sources, the unique chemical sensitivity of extreme ultraviolet reflectometry, and state-of-the-art ptychography imaging algorithms. This tabletop microscope can nondestructively probe surface topography, layer thicknesses, and interface quality, as well as dopant concentrations and profiles. High-fidelity imaging was achieved by implementing variable-angle ptychographic imaging, by using total variation regularization to mitigate noise and artifacts in the reconstructed image, and by using a high-brightness, high-harmonic source with excellent intensity and wavefront stability. We validate our measurements through multiscale, multimodal imaging to show that this technique has unique advantages compared with other techniques based on electron and scanning probe microscopies.

Defect inspection on lithographic substrates, masks, reticles, and wafers is an important quality assurance process in semiconductor manufacturing. Coherent Fourier scatterometry (CFS) using laser beams with a Gaussian spatial profile is the standard workhorse routinely used as an in-line inspection tool to achieve high throughput. As the semiconductor industry advances toward shrinking critical dimensions in high volume manufacturing using extreme ultraviolet lithography, new techniques that enable high-sensitivity, high-throughput, and in-line inspection are critically needed. Here we introduce a set of novel defect inspection techniques based on bright-field CFS using coherent beams that carry orbital angular momentum (OAM). One of these techniques, the differential OAM CFS, is particularly unique because it does not rely on referencing to a pre-established database in the case of regularly patterned structures with reflection symmetry. The differential OAM CFS exploits OAM beams with opposite wavefront or phase helicity to provide contrast in the presence of detects. We numerically investigated the performance of these techniques on both amplitude and phase defects and demonstrated their superior advantages—up to an order of magnitude higher in signal-to-noise ratio—over the conventional Gaussian beam CFS. These new techniques will enable increased sensitivity and robustness for in-line nanoscale defect inspection and the concept could also benefit x-ray scattering and scatterometry in general.

The influence of surface and interface roughness on X-ray and extreme ultraviolet (EUV) reflectometry is becoming increasingly important as layer thicknesses decrease to a few nanometers in next-generation nanodevices and multilayer optics. Here we simulate two different approaches for numerically modeling roughness, the Névot–Croce factor and the graded-interface method, in the Parratt formalism of calculating the complex reflectance of multilayer systems. The simulations were carried out at wavelengths relevant to widely used metrology techniques, including 0.154 nm for X-ray reflectometry and 13.5 nm for EUV lithography. A large discrepancy is observed between the two approaches in several situations: when the roughness is large with respect to the wavelength, for interfaces with large changes in refractive index across the boundary, as well as around reflectance peaks due to interference effects. Caution is thus required when using either approach to model roughness in these situations.