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The manipulation of magnetism provides a unique opportunity for the development of data storage and spintronic applications. Until now, electrical control, pressure tuning, stacking structure dependence, and nanoscale engineering have been realized. However, as the dimensions are decreased, the decrease of the ferromagnetism phase transition temperature (T c) is a universal trend in ferromagnets. Here, we make a breakthrough to realize the synthesis of 1 and 2 unit cell (UC) Cr2Te3 and discover a room-temperature ferromagnetism in two-dimensional Cr2Te3. The newly observed T c increases strongly from 160 K in the thick flake (40.3 nm) to 280 K in 6 UC Cr2Te3 (7.1 nm). The magnetization and anomalous Hall effect measurements provided unambiguous evidence for the existence of spontaneous magnetization at room temperature. The theoretical model revealed that the reconstruction of Cr2Te3 could result in anomalous thickness-dependent T c. This dimension tuning method opens up a new avenue for manipulation of ferromagnetism.

Silk has outstanding mechanical properties and biocompatibility. It has been used to fabricate traditional textiles for thousands of years and can be produced in large scale. Silk materials are potentially attractive in modern textile electronics. However, silk is not electrically conductive, thus limiting its applications in electronics. Moreover, regenerated silk is generally rigid and brittle, which hinder post processing. Here we report the fabrication of conductive silk wire in which carbon nanotube (CNT) yarns are wrapped with fluffy and flexible silk nanofiber films. The silk nanofiber film was prepared by electrospinning and then wrapped around a rotating CNT yarn in situ. The obtained silk-sheathed CNT (CNT@Silk) wire has an insulating sheath, which protects the body against electrical shock. In addition, the fabricated wires exhibit a high electrical conductivity (3.1 × 104 S/m), good mechanical strength (16 cN/tex), excellent flexibility, and high durability. More importantly, the wires have an extremely low density (2.0–7.8 × 104 g/m3), which is 2 orders of magnitude lower than that of the traditional metal wire (for example, Cu). Moreover, the wires display a good resistance to humidity, and a simple post treatment can make the wires splash-resistant, thereby expanding its applications. On the basis of these features, we demonstrate the use of the lightweight CNT@Silk wires in smart clothes, including electrochromism and near-field communication.